Module with multiple power amplifiers and power sensors

• US 7,741,710 B2
• Filed: 07/02/2005
• Issued: 06/22/2010
• Est. Priority Date: 03/18/2004
• Status: Active Grant

• Current Assignee: Micro Mobio Corporation
• Original Assignee: Micro Mobio Corporation
• Inventors: Wang, Weiping, Ichitsubo, Ikuroh, Wang, Guan-Wu
• Primary Examiner(s): Pham; Thanh V
• Application Number:
  US11/173,739
• Publication Number:
  US 20050266617A1
• Time in Patent Office: 1,816 Days
• Field of Search: 257/686, 257/723, 257/724, 330/129, 330/144
• US Class Current: 257/724
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/16 Fillings or auxiliary members in containers or encapsulations, e.g. centering rings H01L23/42, H01L23/552 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

Systems and methods are disclosed for a device having one or more power amplifier and/or LNA circuits positioned on the amplifier module.

Claims

1. A radio frequency (RF) amplifier module, comprising:

a module substrate;

a first active substrate mounted on the module substrate, the first active substrate comprising;

a first transmitting amplifier configured to produce a first amplified RF signal in response to a first transmitting RF signal in a first frequency band;

a second transmitting amplifier configured to produce a second amplified RF signal in response to a second transmitting RF signal in a second frequency band;

a first reception amplifier configured to produce a third amplified RF signal in response to a first reception RF signal in the first frequency band; and

a second reception amplifier configured to produce a fourth amplified RF signal in response to a second reception RF signal in the second frequency band; and

a passive substrate mounted on the module substrate and in electronic connection with the first active substrate, the passive substrate comprising;

a first diplexer configured to receive the first amplified RF signal from the first transmitting amplifier and the second amplified RF signal from the second transmitting amplifier, wherein the first diplexer is configured to send the first amplified RF signal and the second amplified RF signal to a first antenna; and

a second diplexer configured to receive the first reception RF signal and the second reception RF signal from a second antenna, wherein the second diplexer is configured to send the first reception RF signal to the first reception amplifier and to send the second reception RF signal to the second reception amplifier.

2. The RF amplifier module of claim 1, wherein the passive substrate further comprises:

a first impedance matching circuit configured to receive the first amplified RF signal from the first transmitting amplifier and send the first amplified RF signal to the first diplexer;

a second impedance matching circuit configured to receive the second amplified RF signal from the second transmitting amplifier and send the second amplified RF signal to the first diplexer;

a third impedance matching circuit configured to receive the first reception RF signal from the second diplexer and to send the first reception RF signal to the first reception amplifier; and

a fourth impedance matching circuit configured to receive the second reception RF signal from the second diplexer and to send the second reception RF signal to the second reception amplifier.

3. The RF amplifier module of claim 1, wherein the passive substrate further comprises filters configured to filter the first amplified RF signal and the second amplified RF signal before the first amplified RF signal and the second amplified RF signal are received by the first diplexer.

4. The RF amplifier module of claim 1, wherein the passive substrate further comprises filters configured to filter the first reception RF signal and the second reception RF signal from the second diplexer before the first reception RF signal and the second reception RF signal are received by the first reception amplifier and the second reception amplifier.

5. The RF amplifier module of claim 1, wherein the passive substrate further comprises a first RF sensing circuit configured to sense the first amplified RF signal from the first transmitting amplifier and to output a first RF sensing signal, wherein the passive substrate further comprises a second RF sensing circuit configured to sense the second amplified RF signal from the second transmitting amplifier and to output a second RF sensing signal.

6. The RF amplifier module of claim 1, wherein the module substrate comprises a conductive die pad, wherein the first active substrate and the passive substrate are both mounted on the conductive die pad.

7. The RF amplifier module of claim 1, further comprising a second active substrate mounted on the module substrate and in electronic connection with the first active substrate and the passive substrate, the second active substrate comprising:

a switch configured to direct the first amplified RF signal and the second amplified RF signal from the first diplexer to the first antenna, or to direct the first reception RF signal and the second reception RF signal from the second antenna to the second diplexer.

8. The RF amplifier module of claim 7, wherein the module substrate comprises a conductive die pad, wherein the first active substrate, the second active substrate, and the passive substrate are mounted on the same conductive die pad.

9. The RF amplifier module of claim 1, wherein the first active substrate comprises a plurality of bonding pads configured to be connected with the passive substrate by impedance matching bonding wires.

10. The RF amplifier module of claim 9, wherein the module substrate comprises a plurality of terminals configured to be connected to the plurality of bonding pads on the first active substrate, wherein at least some of the plurality of terminals are configured to communicate with the first antenna and the second antenna.

11. The RF amplifier module of claim 1, wherein the first active substrate comprises a plurality of bonding pads configured to be connected within the first active substrate by impedance matching bonding wires.

12. The RF amplifier module of claim 1, wherein the passive substrate comprises an insulating layer.

13. The RF amplifier module of claim 1, wherein the first active substrate comprises one or more conductive layers.

14. The RF amplifier module of claim 1, further comprising an encapsulation material configured to encapsulate the first active substrate and the passive substrate on the module substrate.

15. A radio frequency (RF) amplifier module, comprising:

a module substrate comprising a conductive die pad;

a first active substrate mounted on the module substrate, the first active substrate comprising;

a transmitting amplifier configured to produce a first amplified RF signal in response to a transmitting RF signal; and

a reception amplifier configured to produce a second amplified RF signal in response to a reception RF signal; and

a passive substrate mounted on the module substrate and in electronic connection with the first active substrate, the passive substrate comprising;

a first filter configured to filter the first amplified RF signal from the transmitting amplifier before the first amplified RF signal is sent to an antenna;

a second filter configured to filter the transmitting RF signal before the transmitting RF signal is received by the transmitting amplifier; and

a third filter configured to filter the second amplified RF signal from the reception amplifier,

wherein both the first active substrate and the passive substrate are mounted on the conductive die pad.

16. The RF amplifier module of claim 15, wherein the first active substrate and the passive substrate each comprises a plurality of bonding pads configured to be connected by impedance matching wire bonding between the first active substrate and the passive substrate, and within the first active substrate.

17. The RF amplifier module of claim 15, further comprising a RF sensing circuit configured to sense the first amplified RF signal from the transmitting amplifier and to output a RF sensing signal.

18. The RF amplifier module of claim 15, further comprising a second active substrate mounted on the module substrate and in connection with the first active substrate and the passive substrate, the second active substrate comprising:

a switch configured to direct the first amplified RF signal from the first filter to the first antenna, or to direct the first reception RF signal from the second antenna to the third filter.

19. A radio frequency (RF) amplifier module, comprising:

a module substrate comprising a conductive die pad;

an active substrate mounted on the module substrate, the active substrate comprising;

a transmitting amplifier configured to produce an amplified RF signal in response to a transmitting RF signal; and

a passive substrate comprising;

a first impedance matching circuit;

a first filter coupled to the first impedance matching circuit, wherein the first impedance matching circuit and the first filter are configured to provide impedance matching and to filter the amplified RF signal from the transmitting amplifier before the amplified RF signal is received by an antenna;

a second filter; and

a second impedance matching circuit coupled to the second filter, wherein the second impedance matching circuit and the second filter are configured to provide impedance matching and to filter the transmitting RF signal before the transmitting RF signal is received by the transmitting amplifier,

wherein both the first active substrate and the passive substrate are mounted on the conductive die pad, wherein the active substrate and the passive substrate each comprises a plurality of bonding pads configured to be connected by impedance matching bonding wires between the active substrate and the passive substrate, and within the active substrate.

20. The RF amplifier module of claim 19, further comprising a RF sensing circuit configured to sense the amplified RF signal from the transmitting amplifier and to output a RF sensing signal.