Method for manufacturing semiconductor sensor

• US 7,745,235 B2
• Filed: 06/05/2008
• Issued: 06/29/2010
• Est. Priority Date: 03/09/2005
• Status: Expired due to Fees

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: Kimino, Kazunari
• Primary Examiner(s): Lee; Calvin
• Application Number:
  US12/133,791
• Publication Number:
  US 20080241984A1
• Time in Patent Office: 754 Days
• Field of Search: 7351433-51438, 438 11- 18, 257/48
• US Class Current: 438/11
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges

Abstract

A semiconductor sensor is disclosed that includes a substrate including at least a semiconductor layer. The substrate includes a weight arranging part in the vicinity of the center of the substrate, a flexible part around the weight arranging part, and supporting parts provided around the flexible part. The semiconductor sensor further includes a weight arranged on the weight arranging part. The weight is made of a material different from that of the weight arranging part and the flexible parts.

Claims

1. A method of manufacturing a semiconductor sensor, comprising the steps of:

removing a predetermined portion of a semiconductor substrate selectively except for at least a region where a supporting part is to be formed so as to form a weight arranging part and a flexible part; and

forming a weight on a surface of the semiconductor substrate at the weight arranging part, and said weight comprises a resin part provided on the weight arranging part, said resin part being made of resin, and a central part provided on the resin part, said metal part including at least a metal.

2. The method of manufacturing the semiconductor sensor as claimed in claim 1, wherein the weight forming step further comprises the steps of:

dripping a liquid material for the weight from an exhaust nozzle onto the weight arranging part; and

hardening the liquid material for the weight dripped onto the weight arranging part so as to form the weight.

3. The method of manufacturing the semiconductor sensor as claimed in claim 2, wherein unhardened resin is used as the liquid material for the weight.

4. The method of manufacturing the semiconductor sensor as claimed in claim 2, wherein as the liquid material for the weight, a material including at least metal having a relative density higher than the weight arranging part and the flexible part is provided.

5. The method of manufacturing the semiconductor sensor as claimed in claim 4, wherein as the liquid material for the weight, metal paste including the metal is used.

6. The method of manufacturing the semiconductor sensor as claimed in claim 4, wherein the metal includes magnetic metal.

7. The method of manufacturing the semiconductor sensor as claimed in claim 1, wherein the weight forming step further includes the steps of:

forming a metal paste layer by applying the metal paste on the weight arranging part;

forming an unhardened resin layer by applying an unhardened resin on the metal paste layer; and

hardening the metal paste layer and the unhardened resin layer so as to form the weight including a metal part comprising the metal paste and a resin part comprising a hardened resin, said resin part being formed on the metal part.

8. The method of manufacturing the semiconductor sensor as claimed in claim 7, wherein a region where the unhardened resin layer is to be formed is controlled so that the resin part covers the metal part to prevent the metal part from contacting a surrounding atmosphere.

9. The method of manufacturing the semiconductor sensor as claimed in claim 1, wherein the weight forming step further includes the steps of:

forming a second unhardened resin layer by applying a second unhardened resin on the weight arranging part;

forming a metal paste later by applying the metal paste on the second unhardened resin layer; and

hardening the second unhardened resin layer and the metal paste layer so as to form the weight including a second resin part constituted of a second hardened resin and a metal part comprising the metal paste, said metal part being formed on the second resin part.

10. The method of manufacturing the semiconductor sensor as claimed in claim 9, wherein the second resin layer functions as an adhesion improving layer to improve adhesion between the weight arranging part and the metal part.

11. The method of manufacturing the semiconductor sensor as claimed in claim 10, further comprising the steps of:

forming an unhardened resin layer by applying an unhardened resin on the metal paste layer after the metal paste layer is formed; and

hardening the second unhardened resin layer, the metal paste layer, and the unhardened resin layer so as to form the weight further including a resin part comprising a hardened resin, said resin part being formed on the metal part.

12. The method of manufacturing the semiconductor sensor as claimed in claim 11, wherein a material of the unhardened resin is the same as a material of the second unhardened resin.

13. The method of manufacturing the semiconductor sensor as claimed, in claim 1, wherein as the semiconductor substrate, an SOI substrate is used comprising a semiconductor Layer, an insulating layer, and a second semiconductor layer being laminated in order from a surface of the substrate, and said weight arranging part forming step further comprises a step of removing a region of the second semiconductor layer where the weight arranging part and the flexible part are formed according to an etching utilizing the insulating layer as an etching stopper layer stopping the etching.