Method of making three dimensional NAND memory

• US 7,745,265 B2
• Filed: 03/27/2007
• Issued: 06/29/2010
• Est. Priority Date: 03/27/2007
• Status: Expired due to Fees

• Current Assignee: Foodservices Brand Group LLC
• Original Assignee: SanDisk 3D LLC (Western Digital Corporation)
• Inventors: Mokhlesi, Nima, Scheuerlein, Roy
• Primary Examiner(s): Lee; Hsien-ming
• Assistant Examiner(s): PARENDO, KEVIN A
• Application Number:
  US11/691,885
• Publication Number:
  US 20080242008A1
• Time in Patent Office: 1,190 Days
• Field of Search: 438/129, 257/E21.598
• US Class Current: 438/129
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/30 characterised by the memory core region
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

A method of making a monolithic, three dimensional NAND string, includes forming a select transistor, forming a first memory cell over a second memory cell, forming a first word line for the first memory cell, forming a second word line for the second memory cell, forming a bit line, forming a source line, and forming a select gate line for the select transistor. The first and the second word lines are not parallel to the bit line, and the first and the second word lines extend parallel to at least one of the source line and the select gate line.

Claims

1. A method of making a monolithic, three dimensional NAND string, comprising:

forming a first memory cell over a second memory cell;

forming a first word line for the first memory cell;

forming a second word line for the second memory cell;

forming a bit line; and

forming a source line;

wherein;

the first word line extends from the first memory cell in a first direction;

the second word line extends from the second memory cell in a second direction not parallel to the first direction;

the NAND string is formed vertically over a substrate;

a select transistor is located on the substrate or in a trench in the substrate;

the first memory cell is located in a first device level;

the second memory cell is located in a second device level located on the select transistor and below the first device level;

a semiconductor active region of the first memory cell is formed epitaxially on a semiconductor active region of the second memory cell;

the semiconductor active region of the second memory cell is formed epitaxially on a semiconductor active region of the select transistor;

a first charge storage dielectric is located between the semiconductor active region of the first memory cell and the first word line;

a second charge storage dielectric is located between the semiconductor active region of the second memory cell and the second word line;

the semiconductor active region of the first memory cell comprises a first pillar;

the semiconductor active region of the second memory cell comprises a second pillar;

the semiconductor active region of the select transistor comprises a third pillar;

the first pillar and the second pillar each comprise an upper second conductivity type semiconductor region above a first conductivity type semiconductor region above a lower second conductivity type region;

the lower second conductivity type semiconductor region in the first pillar contacts the upper second conductivity type semiconductor region in the second pillar;

the first pillar is not aligned with the second pillar, such that the first pillar extends laterally past the second pillar;

the second pillar is not aligned with the third pillar, such that the second pillar extends laterally past the third pillar;

the first, second, and third pillars are disposed about a first, second, and third central axis, respectively, each of which extend in a vertical direction substantially normal to the substrate;

the first central axis is laterally offset from the second central axis; and

the second central axis is laterally offset from the third central axis.

2. The method of claim 1, wherein the first direction is perpendicular to the second direction.

3. The method of claim 1, wherein the second direction is oriented at an angle of 1 to 90 degrees with respect to the first direction.

4. The method of claim 1, wherein:

the first word line extends in the first direction from the first memory cell to a memory cell of a first separate NAND string which does not comprise the first memory cell; and

the second word line extends in the second direction from the second memory cell to a memory cell of a second separate NAND string which does not comprise the second memory cell.

5. The method of claim 1, wherein the select transistor is located in the trench in the substrate.

6. The method of claim 5, wherein the trench is an elongated trench having a longitudinal dimension extending substantially linearly along the substrate.

7. The method of claim 6, wherein a width of the trench along a lateral dimension is narrower relative to a length of the trench along the longitudinal dimension.

8. The method of claim 1, wherein the select transistor is located on the substrate.