Method of fabricating active layer of thin film transistor
First Claim
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1. A method of fabricating an active layer of a thin film transistor, comprising:
- providing a substrate;
preparing a semiconductor precursor solution using a liquid process;
applying the semiconductor precursor solution on the substrate to form a semiconductor precursor thin film; and
irradiating a portion of the semiconductor precursor thin film with a light source to remove residual solvent in the semiconductor precursor thin film and transform the portion of the semiconductor precursor thin film into an active semiconductor layer having semiconductor property, wherein the semiconductor precursor thin film which is not irradiated by the light source is remained on the substrate.
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Abstract
A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.
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Citations
10 Claims
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1. A method of fabricating an active layer of a thin film transistor, comprising:
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providing a substrate; preparing a semiconductor precursor solution using a liquid process; applying the semiconductor precursor solution on the substrate to form a semiconductor precursor thin film; and irradiating a portion of the semiconductor precursor thin film with a light source to remove residual solvent in the semiconductor precursor thin film and transform the portion of the semiconductor precursor thin film into an active semiconductor layer having semiconductor property, wherein the semiconductor precursor thin film which is not irradiated by the light source is remained on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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