Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
First Claim
1. A method of processing a substrate, comprising:
- providing a substrate having conductive features formed in a dielectric material to a processing chamber;
forming a plurality of layers on the substrate, comprising;
a first dielectric layer formed in direct contact with the dielectric material, the first dielectric layer having barrier properties and comprising silicon, carbon, and nitrogen;
a second dielectric layer having barrier properties and comprising silicon and carbon, wherein the second dielectric layer is nitrogen free; and
a third dielectric layer comprising silicon, oxygen, and carbon, wherein the third dielectric layer has a dielectric constant of about 3 or less, wherein the second dielectric layer is formed by reacting a processing gas, comprising;
a compound containing carbon and oxygen; and
an oxygen-free organosilicon compound comprising an organosilicon compound having the formula SiHa(CH3)b(C6H5)c, wherein a is 0 to 3, b is 0 to 3, and c is 1 to 4.
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Accused Products
Abstract
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
77 Citations
5 Claims
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1. A method of processing a substrate, comprising:
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providing a substrate having conductive features formed in a dielectric material to a processing chamber; forming a plurality of layers on the substrate, comprising; a first dielectric layer formed in direct contact with the dielectric material, the first dielectric layer having barrier properties and comprising silicon, carbon, and nitrogen; a second dielectric layer having barrier properties and comprising silicon and carbon, wherein the second dielectric layer is nitrogen free; and a third dielectric layer comprising silicon, oxygen, and carbon, wherein the third dielectric layer has a dielectric constant of about 3 or less, wherein the second dielectric layer is formed by reacting a processing gas, comprising; a compound containing carbon and oxygen; and an oxygen-free organosilicon compound comprising an organosilicon compound having the formula SiHa(CH3)b(C6H5)c, wherein a is 0 to 3, b is 0 to 3, and c is 1 to 4.
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2. A method of processing a substrate, comprising:
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providing a substrate having conductive features formed in a dielectric material to a processing chamber; forming a plurality of layers on the substrate, comprising; a first dielectric layer formed in direct contact with the dielectric material, the first dielectric layer having barrier properties and comprising silicon, carbon, and nitrogen; a second dielectric layer having barrier properties and comprising silicon and carbon, wherein the second dielectric layer is nitrogen free; and a third dielectric layer comprising silicon, oxygen, and carbon, wherein the third dielectric layer has a dielectric constant of about 3 or less, wherein the second dielectric layer is formed by reacting a processing gas, comprising; a compound containing carbon and oxygen; an oxygen-free organosilicon compound; and an inert gas. - View Dependent Claims (3, 4)
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5. A method of processing a substrate, comprising:
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providing a substrate having conductive features formed in a dielectric material to a processing chamber; forming a plurality of layers on the substrate, comprising; a first dielectric layer formed in direct contact with the dielectric material, the first dielectric layer having barrier properties and comprising silicon, carbon, and nitrogen; a second dielectric layer having barrier properties and comprising silicon and carbon, wherein the second dielectric layer is nitrogen free; and a third dielectric layer comprising silicon, oxygen, and carbon, wherein the third dielectric layer has a dielectric constant of about 3 or less, wherein forming the second dielectric layer comprises supplying trimethylsilane to a processing chamber at a flow rate between about 50 sccm and about 300 sccm, supplying carbon dioxide at a flow rate between about 100 sccm and about 800 sccm, supplying helium at a flow rate between about 200 sccm and about 800 sccm, maintaining a substrate temperature between about 300°
C. and about 400°
C., maintaining a chamber pressure between about 2 Torr and about 5 Torr, and applying a RF power of between about 200 watts and about 500 watts.
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Specification