Method for improving process control and film conformality of PECVD film
First Claim
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1. A method of forming a silicon-based dielectric film, comprising:
- providing a semiconductor device substrate in a deposition chamber; and
,depositing on the substrate a silicon-based dielectric film by a single process operation using pulsed plasma enhanced chemical vapor deposition wherein the high frequency radio frequency power of the plasma is pulsed at a frequency of 1 Hz to 10 kHz.
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Abstract
A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal.
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23 Claims
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1. A method of forming a silicon-based dielectric film, comprising:
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providing a semiconductor device substrate in a deposition chamber; and
,depositing on the substrate a silicon-based dielectric film by a single process operation using pulsed plasma enhanced chemical vapor deposition wherein the high frequency radio frequency power of the plasma is pulsed at a frequency of 1 Hz to 10 kHz. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor processing apparatus for depositing on a substrate a silicon-based dielectric film comprising:
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a chamber having a substrate holder, an inlet for process gases, and a connection to a vacuum source including; a high frequency radio frequency generator capable of pulsing the high frequency radio frequency power of a plasma; and a controller configured to execute a set of instructions, the set of instructions including instructions for depositing on the substrate a silicon-based dielectric film by a single process operation using pulsed plasma enhanced chemical vapor deposition wherein the high frequency radio frequency power of the plasma is pulsed, the instructions comprising; injecting one or more precursor gases into the chamber; and pulsing the high frequency radio frequency power of the plasma at a frequency of 1 Hz to 10 kHz.
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Specification