Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
First Claim
1. A method of curing a silicon oxide layer on a substrate, the method comprising:
- providing a semiconductor processing chamber and a substrate;
forming a silicon oxide layer overlying at least a portion of the substrate the silicon oxide layer including carbon species as a byproduct of formation;
introducing an acidic vapor into the semiconductor processing chamber after forming the silicon oxide layer, the acidic vapor reacting with the silicon oxide layer, wherein the reaction between the acidic vapor and the silicon oxide layer removes the carbon species from the silicon oxide layer; and
removing the acidic vapor from the semiconductor processing chamber.
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Abstract
Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.
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Citations
19 Claims
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1. A method of curing a silicon oxide layer on a substrate, the method comprising:
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providing a semiconductor processing chamber and a substrate; forming a silicon oxide layer overlying at least a portion of the substrate the silicon oxide layer including carbon species as a byproduct of formation; introducing an acidic vapor into the semiconductor processing chamber after forming the silicon oxide layer, the acidic vapor reacting with the silicon oxide layer, wherein the reaction between the acidic vapor and the silicon oxide layer removes the carbon species from the silicon oxide layer; and removing the acidic vapor from the semiconductor processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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