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Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process

  • US 7,745,352 B2
  • Filed: 08/27/2007
  • Issued: 06/29/2010
  • Est. Priority Date: 08/27/2007
  • Status: Expired due to Fees
First Claim
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1. A method of curing a silicon oxide layer on a substrate, the method comprising:

  • providing a semiconductor processing chamber and a substrate;

    forming a silicon oxide layer overlying at least a portion of the substrate the silicon oxide layer including carbon species as a byproduct of formation;

    introducing an acidic vapor into the semiconductor processing chamber after forming the silicon oxide layer, the acidic vapor reacting with the silicon oxide layer, wherein the reaction between the acidic vapor and the silicon oxide layer removes the carbon species from the silicon oxide layer; and

    removing the acidic vapor from the semiconductor processing chamber.

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