Dual-phosphor flat panel radiation detector

• US 7,745,798 B2
• Filed: 11/15/2006
• Issued: 06/29/2010
• Est. Priority Date: 11/15/2005
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Takahashi, Kenji
• Primary Examiner(s): Porta; David P
• Assistant Examiner(s): Green; Yara B
• Application Number:
  US11/599,404
• Publication Number:
  US 20100127279A1
• Time in Patent Office: 1,322 Days
• Field of Search: 250/370.11
• US Class Current: 250/370.11
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00

Abstract

A solid state radiation detector capable of improving the sharpness of obtained radiation images. The solid state radiation detector includes: two scintillator layers that convert irradiated radiation to light; and a solid state photodetector, disposed between the two scintillators, that detects the light converted by the two scintillator layers and converts the detected light to electrical signals. Here, the scattering length of each of the scintillators is not greater than 100 μm for the light propagating in the direction parallel to the surface of the scintillator.

Claims

1. A radiation detector, comprising:

two scintillator layers that convert irradiated radiation to light; and

a solid state photodetector that detects the light converted by the two scintillator layers and converts the detected light to electrical signals, the solid state photodetector being disposed between the two scintillators,

wherein the scattering length of each of the scintillators is not greater than 100 μ

m for the light propagating in the direction parallel to the surface of the scintillator,

wherein the distance between the surfaces of the two scintillator layers facing each other is less than or equal to 40 μ

m, and

wherein the solid state photodetector comprises;

a photoconductive layer that shows conductivity by receiving the light; and

thin film transistors for outputting electrical signals, the photoconductive layer and thin film transistors being layered on top of another, or arranged in a planar fashion.

2. The radiation detector according to claim 1, wherein the thin film transistors are thin film transistors formed on a substrate and peel transferred from the substrate.

3. The radiation detector according to claim 1, wherein the thin film transistors are thin film transistors with the substrate, on which the thin film transistors are formed, being thinned or removed by a chemical dissolution method or a polishing method.

4. The radiation detector according to claim 1, wherein the thin film transistors are thin film transistors formed on a substrate peelably disposed on a support and peeled off the support together with the substrate.

5. The radiation detector according to claim 1, wherein the thin film transistors are transparent thin film transistors.

6. The radiation detector according to claim 1, wherein the scattering length of the light scattering in a direction orthogonal to a surface of each scintillator is longer than a thickness of the each scintillator.

7. The radiation detector according to claim 1, wherein the scattering length with respect to light of each of the scintillators that propagates in a direction parallel to the scintillators is 20 μ

m or less.