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Polychromatic LED's and related semiconductor devices

  • US 7,745,814 B2
  • Filed: 12/09/2004
  • Issued: 06/29/2010
  • Est. Priority Date: 12/09/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising a first potential well located within a pn junction that emits light at a first wavelength when the pn junction is biased, a second potential well that emits light at a second wavelength in response to an absorption of at least a portion of light at the first wavelength, and a first absorbing layer closely adjacent to the second potential well and having a band gap energy less than or equal to a first transition energy of the first potential well and greater than a second transition energy of the second potential well.

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