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Pixel structure and method for forming the same

  • US 7,745,825 B2
  • Filed: 09/20/2007
  • Issued: 06/29/2010
  • Est. Priority Date: 04/03/2007
  • Status: Active Grant
First Claim
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1. A pixel structure, comprising:

  • at least one transistor;

    a first storage capacitor electrically connected to the transistor;

    a first conductive layer;

    an interlayer dielectric layer, covering the first conductive layer, and having at least one first opening;

    a second conductive layer, formed on a part of the interlayer dielectric layer, and electrically connected to the first conductive layer through the first opening;

    a passivation layer, covering the transistor and the second conductive layer, and having at least one second openinga third conductive layer, formed on a part of the passivation layer, and electrically connected to the first conductive layer through the first opening; and

    a fourth conductive layer covering the second conductive layer and a part of the interlayer dielectric layer, such that the first storage capacitor is formed by the third conductive layer, the passivation layer, the fourth conductive layer, and the second conductive layer.

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