Semiconductor image sensor and method for fabricating the same

• US 7,745,834 B2
• Filed: 06/21/2006
• Issued: 06/29/2010
• Est. Priority Date: 08/03/2005
• Status: Active Grant

• Current Assignee: Collabo Innovations, Inc. (Wi-LAN Inc.)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Fukuda, Toshiyuki, Minamio, Masanori
• Primary Examiner(s): Trinh, Hoa B
• Application Number:
  US11/471,659
• Publication Number:
  US 20070029582A1
• Time in Patent Office: 1,469 Days
• Field of Search: 257/434, 257/432, 257/433, 257/437, 257/435, 257/444, 257/234, 257/228, 257/232, 257/E29.325, 257/E29.067, 257/E29.237, 257/431, 257/81, 257/84, 257/98, 257/99, 257/100, 348/294, 348/297, 348/308
• US Class Current: 257/81
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.

Claims

1. A semiconductor image sensor, which is connected with an external device when the sensor is used, the sensor comprising:

a semiconductor imaging element including a silicon substrate, an imaging area for detecting light disposed on the silicon substrate, a peripheral circuit area disposed on the silicon substrate, and an electrode area in which electrode terminals are formed on the silicon substrate;

a transparent resin layer formed on a circuit-formation surface of the semiconductor imaging element; and

cylindrical electrodes formed on the electrode terminals, having an upper surface existing in the same plane as an upper surface of the transparent resin layer, and provided for connection with the external device, wherein;

an upper surface of the semiconductor imaging element is entirely covered with a transparent resin, and the silicon substrate is exposed at a side surface and a back surface of the semiconductor imaging element,

an area of an upper surface of the transparent resin layer is substantially the same as that of the upper surface of the semiconductor imaging element, and

side faces of the transparent resin layer and the semiconductor imaging element are substantially located in the same plane.

2. The sensor of claim 1, further comprising antireflection films provided on side faces of the cylindrical electrodes.

3. The sensor of claim 1, wherein the transparent resin layer is made of at least one material selected from the group consisting of epoxy resin, acrylic resin, and polyimide resin.

4. A semiconductor device, comprising:

a semiconductor substrate,

an imaging area formed in a first surface of the semiconductor substrate for detecting light, said imaging area having an imaging element formed therein,

a peripheral circuit area disposed around the imaging area and on the first surface, said peripheral circuit area having a peripheral circuit formed therein,

an electrode terminal area disposed outside of the peripheral circuit area relative to the imaging area and on the first surface, said electrode terminal area having an electrode terminal formed therein; and

a transparent component covering the imaging area,

wherein at least one of outermost edges of the transparent component is disposed between said electrode terminal area and said imaging area, and

all outermost edges of the transparent component are disposed between the imaging area and edges of the semiconductor substrate.

5. The sensor of claim 4, further comprising a first antireflection film provided on side faces of the transparent component.

6. The sensor of claim 4, further comprising a glass substrate provided on or above the transparent component.

7. The sensor of claim 6, comprising a second antireflection film provided at least on side faces of the transparent component and on side faces of the glass substrate.

8. The sensor of claim 6, wherein the adhesive member and the transparent component are both made of material whose refractive index is lower than that of the glass substrate.

9. The sensor of claim 4, wherein said electrode terminal area includes electrode terminals formed in all sides of said electrode terminal area.

10. The sensor of claim 4, wherein said electrode terminal has a height which is less than the height of said transparent component relative to the first surface of said semiconductor substrate.

11. The sensor of claim 4, wherein said transparent component has a rectangular shape.

12. The sensor of claim 11, wherein none of the outermost edges of the transparent component extend into the electrode terminal area in plane view.

13. The sensor of claim 11, wherein none of the outermost edges of the transparent component extend to the edges of the semiconductor substrate in plane view.

14. The sensor of claim 11, wherein all of the outermost edges of the transparent component extend into the peripheral circuit area in plane view.

15. The sensor of claim 4, further comprising a wire connected to the electrode terminal.