Semiconductor light emitting device

• US 7,745,843 B2
• Filed: 09/26/2007
• Issued: 06/29/2010
• Est. Priority Date: 09/26/2006
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Baba, Toshihiko, Sonoda, Junichi, Kazama, Takuya
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US11/904,290
• Publication Number:
  US 20080149916A1
• Time in Patent Office: 1,007 Days
• Field of Search: 257/98, 257/95, 257/E33.073, 257/E33.074
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

A light emitting device with an increased light extraction efficiency includes a two-dimensional periodic structure in a surface thereof and has two layers that together form an asymmetric refractive index distribution with respect to the active layer, which is in between the two layers. The light emitting device includes a substrate layer, a first layer, an active layer and a second layer that are stacked sequentially. The first layer includes at least one layer, including a semiconductor cladding layer of a first conductivity type. At least one layer of the first layer has a refractive index that is lower than a refractive index of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer. Each constituent layer of the second layer has a refractive index that is lower than the refractive index of the active layer.

Claims

1. A light emitting device comprising:

a substrate layer;

a first layer which is disposed above the substrate layer, and which comprises at least one layer including a semiconductor cladding layer of a first conductivity type;

an active layer disposed above the first layer; and

a second layer which is disposed above the active layer, and which comprises a semiconductor cladding layer of a second conductivity type, a current-diffusion layer, and an intermediate layer located above the current-diffusion layer, the second layer having a two-dimensional periodic structure in a surface thereof, wherein the two-dimensional periodic structure is formed above the current diffusion layer,

wherein the first layer includes at least one layer having a refractive index that is lower than a refractive index of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer,

wherein each constituent layer of the second layer other than the intermediate layer has a lower refractive index than the active layer, and

wherein the intermediate layer has a refractive index that is less than or equal to the refractive index of the active layer and that is higher than a refractive index of the semiconductor cladding layer of the second conductivity type.

4. The light emitting device according to claim 1, wherein a distance between a bottom of the two-dimensional periodic structure and a top of the active layer is in a range of 0.1nλ

to nλ

, where n is a refractive index of a layer between the bottom of the two-dimensional periodic structure and the top of the active layer, and λ

is an optical wavelength of light emitted from the active layer.

6. The light emitting device according to claim 1, further comprising a high reflectance layer disposed between the substrate layer and the first layer.

9. The light emitting device according to claim 1, wherein the refractive index of the intermediate layer is higher than a refractive index of any other constituent layer of the second layer.

12. The light emitting device according to claim 1, wherein the intermediate layer is provided outside the two dimensional periodic structure.

2. A light emitting device comprising:

a substrate layer;

a first layer which comprises at least one layer and which is disposed above the substrate layer;

an active layer which has a multiple quantum well structure and which is disposed above the first layer; and

a second layer which is disposed above the active layer, and which comprises a semiconductor cladding layer, a current-diffusion layer, and an intermediate layer located above the current-diffusion layer, the second layer having a two-dimensional periodic structure in a surface thereof, wherein the two-dimensional periodic structure is formed above the current-diffusion layer,

wherein the first layer includes at least one layer having a refractive index that is lower than a thickness-weighted-average of refractive indices of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer,

wherein each constituent layer of the second layer other than the intermediate layer has a lower refractive index than the thickness-weighted-average of the refractive indices of the active layer, and

wherein the intermediate layer has a refractive index that is less than or equal to the thickness-weighted-average of refractive indices of the active layer and that is higher than a refractive index of the semiconductor cladding layer.

5. The light emitting device according to claim 2, wherein a distance between a bottom of the two-dimensional periodic structure and a top of the active layer is in a range of 0.1nλ

to nλ

, where n is a refractive index of a layer between the bottom of the two-dimensional periodic structure and the top of the active layer, and λ

is an optical wavelength of light emitted from the active layer.

7. The light emitting device according to claim 2, further comprising a high reflectance layer disposed between the substrate layer and the first layer.

10. The light emitting device according to claim 2, wherein the refractive index of the intermediate layer is higher than a refractive index of any other constituent layer of the second layer.

13. The light emitting device according to claim 2, wherein the intermediate layer is provided outside the two dimensional periodic structure.

3. A light emitting device comprising:

a substrate layer;

a first layer which comprises at least one layer and which is disposed above the substrate layer;

an active layer which has a multiple quantum well structure and which is disposed above the first layer; and

a second layer which is disposed above the active layer, and which comprises a semiconductor cladding layer, a current-diffusion layer, and an intermediate layer located above the current-diffusion layer, the second layer having a two dimensional periodic structure in a surface thereof, wherein the two-dimensional periodic structure is formed above the current diffusion layer,

wherein the first layer includes at least one layer having a refractive index that is lower than a thickness-weighted-average of refractive indices of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer,

wherein each constituent layer of the second layer other than the intermediate layer has a lower refractive index than the thickness-weighted-average of the refractive indices of the active layer, and

wherein the intermediate layer has a refractive index that is less than or equal to a refractive index of a well layer of the multiple quantum well structure and that is higher than a refractive index of the semiconductor cladding layer.

8. The light emitting device according to claim 3, further comprising a high reflectance layer disposed between the substrate layer and the first layer.

11. The light emitting device according to claim 3, wherein the refractive index of the intermediate layer is higher than a refractive index of any other constituent layer of the second layer.

14. The light emitting device according to claim 3, wherein the intermediate layer is provided outside the two dimensional periodic structure.

15. A light emitting device comprising:

a substrate layer;

a first layer which is disposed above the substrate layer, and which comprises at least one layer including a semiconductor cladding layer of a first conductivity type;

an active layer disposed above the first layer; and

a second layer which is disposed above the active layer, and which has a two-dimensional periodic structure in a surface thereof, the second layer comprising multiple layers including a semiconductor cladding layer of a second conductivity type and an intermediate layer having a refractive index that is less than or equal to a refractive index of the active layer and that is higher than a refractive index of any other constituent layer of the second layer, wherein the intermediate layer is provided outside the two-dimensional periodic structure.

17. The light emitting device according to claim 15, wherein a distance between a bottom of the two-dimensional periodic structure and a top of the active layer is in a range of 0.1nλ

to nλ

, where n is a refractive index of a layer between the bottom of the two-dimensional periodic structure and the top of the active layer, and λ

is an optical wavelength of light emitted from the active layer.

19. The light emitting device according to claim 15, further comprising a high reflectance layer interposed between the substrate layer and the first layer.

16. A light emitting device comprising:

a substrate layer;

a first layer which comprises at least one layer and which is disposed above the substrate layer;

an active layer which has a multiple quantum well structure and which is disposed above the first layer; and

a second layer which is disposed above the active layer, and which has a two-dimensional periodic structure in a surface thereof, the second layer comprising multiple layers including an intermediate layer having a refractive index that is less than or equal to a refractive index of a well layer of the multiple quantum well structure and that is higher than a refractive index of any other constituent layer of the second layer, wherein the intermediate layer is provided outside the two-dimensional periodic structure.

18. The light emitting device according to claim 16, wherein a distance between a bottom of the two-dimensional periodic structure and a top of the active layer is in a range of 0.1nλ

to nλ

, where n is a refractive index of a layer between the bottom of the two-dimensional periodic structure and the top of the active layer, and λ

is an optical wavelength of light emitted from the active layer.

20. The light emitting device according to claim 16, further comprising a high reflectance layer interposed between the substrate layer and the first layer.