Devices and methods for preventing capacitor leakage
First Claim
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1. A semiconductor device, comprising:
- a contact plug formed in a contact opening through a first insulating layer;
an etch stop layer on the first insulating layer;
a second insulating layer directly on the etch stop layer;
a capacitor landing on the contact plug with an overlay shift, comprising a bottom electrode on the top and sidewall of the contact plug, a capacitor dielectric on the bottom electrode, and a top electrode on the capacitor dielectric;
wherein the second insulating layer defines the height of the capacitor bottom electrode;
wherein one corner of the top surface of the contact plug is covered by the capacitor;
wherein the etch stop layer extends to other three corners of the contact plug not covered by the capacitor; and
wherein the total thickness Z of the bottom electrode and the capacitor dielectric satisfies at least one of the conditions;
Z≧
Y or Z≧
½
Xwhere X is the distance of the overlay shift, and Y is the height of the sidewall of the contact plug covered by the bottom electrode.
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Abstract
Devices and methods for preventing capacitor leakage caused by sharp tip. The formation of sharp tip is avoided by a thicker bottom electrode which fully fills a micro-trench that induces formation of the sharp tip. Alternatively, formation of the sharp tip can be avoided by recessing the contact plug to substantially eliminate the micro-trench.
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Citations
4 Claims
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1. A semiconductor device, comprising:
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a contact plug formed in a contact opening through a first insulating layer; an etch stop layer on the first insulating layer; a second insulating layer directly on the etch stop layer; a capacitor landing on the contact plug with an overlay shift, comprising a bottom electrode on the top and sidewall of the contact plug, a capacitor dielectric on the bottom electrode, and a top electrode on the capacitor dielectric; wherein the second insulating layer defines the height of the capacitor bottom electrode; wherein one corner of the top surface of the contact plug is covered by the capacitor; wherein the etch stop layer extends to other three corners of the contact plug not covered by the capacitor; and wherein the total thickness Z of the bottom electrode and the capacitor dielectric satisfies at least one of the conditions;
Z≧
Y or Z≧
½
Xwhere X is the distance of the overlay shift, and Y is the height of the sidewall of the contact plug covered by the bottom electrode. - View Dependent Claims (2, 3, 4)
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Specification