Micro thin-film structure, MEMS switch employing such a micro thin-film, and method of fabricating them

• US 7,746,536 B2
• Filed: 09/21/2005
• Issued: 06/29/2010
• Est. Priority Date: 10/27/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kweon, Soon-cheol, Shin, Hyung-jae, Lee, Sang-hun, Kim, Che-heung, Hong, Seok-kwan, Jeon, Byung-hee
• Primary Examiner(s): Mack; Ricky L
• Assistant Examiner(s): Tra; Tuyen Q
• Application Number:
  US11/230,502
• Publication Number:
  US 20060087716A1
• Time in Patent Office: 1,742 Days
• Field of Search: 359/290, 359/291, 359/292, 359/293, 359/295, 359/298, 359/220, 359/222, 359/223, 359/224, 359/320, 359/322, 359/323, 359/324, 310/309, 318/116
• US Class Current: 359/290
• CPC Class Codes: H01H 1/0036 Switches making use of microelectromechanical systems [MEMS] for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.

Claims

1. A MEMS switch comprising:

a substrate;

a signal line formed on a top side of the substrate; and

a movable electrode formed spaced apart from the substrate to electrically contact with the signal line,

wherein the movable electrode comprises an electrode layer and a reinforcement layer formed on a top side of the electrode layer,

wherein the reinforcement layer is formed as a single, continuous layer; and

wherein a top side of the electrode layer has prominence parts, a bottom side of the reinforcement layer is configured to correspond with the prominence parts, and a bottom of the electrode layer where the prominence parts are formed is entirely flat.

2. The MEMS switch of claim 1, wherein the reinforcement layer is formed from a single material.

3. A MEMS switch comprising:

a substrate;

a signal line formed on a top side of the substrate; and

a movable electrode formed spaced apart from the substrate to electrically contact with the signal line,

wherein the movable electrode comprises an electrode layer and a reinforcement layer formed on a top side of the electrode layer,

wherein the electrode layer is formed with plural through-holes, and the reinforcement layer is formed to extend on inner circumferential surfaces of the plural through-holes as well as on the top side of the electrode layer, and

wherein second through-holes are formed in the through-holes of the electrode layer to make the electrode layer fluidly communicate with the reinforcement layer by the reinforcement layer and have no bottoms thereof.

4. A MEMS switch as claimed in claim 3, wherein the through-holes are formed in a shape comprising at least one of polygonal, circular and elliptical shapes.

5. A MEMS switch as claimed in claim 3, wherein the second through-holes traverse the entire length of the first through-holes so that the first through holes does not have bottoms.