Three dimensional hexagonal matrix memory array
First Claim
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1. A nonvolatile memory device, comprising:
- a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern;
at least one bit line; and
at least one word line;
wherein the at least one bit line and the at least one word line are located in two different planes, and wherein the at least one word line crosses the at least one bit line at an angle of about 60 degrees.
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Abstract
A nonvolatile memory device includes a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern. The nonvolatile memory cells may be pillar shaped non-volatile memory cells which can be patterned using triple or quadruple exposure lithography or by using a self-assembling layer.
57 Citations
15 Claims
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1. A nonvolatile memory device, comprising:
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a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern; at least one bit line; and at least one word line; wherein the at least one bit line and the at least one word line are located in two different planes, and wherein the at least one word line crosses the at least one bit line at an angle of about 60 degrees. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A nonvolatile memory device, comprising:
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a plurality of word lines; a plurality of bit lines; and a nonvolatile memory cell array comprising a plurality of nonvolatile memory cells; wherein; the plurality of word lines cross the plurality of bit lines at an angle of about 60 degrees in the memory cell array; and the plurality of nonvolatile memory cells in the nonvolatile memory cell array are arranged in a plurality of subarrays which are substantially parallelogram shaped. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification