MEMS sensor suite on a chip

• US 7,748,272 B2
• Filed: 03/20/2008
• Issued: 07/06/2010
• Est. Priority Date: 10/15/2004
• Status: Active Grant

• Current Assignee: Morgan Research Corp. (CGI, Inc.)
• Original Assignee: Morgan Research Corp. (CGI, Inc.)
• Inventors: Elliot, Robert Faye, Reiner, Philip John, Williams, Marty Ray, Kranz, Michael Scott, Whitley, Michael Ray
• Primary Examiner(s): Kwok; Helen C.
• Application Number:
  US12/051,905
• Publication Number:
  US 20080163687A1
• Time in Patent Office: 838 Days
• Field of Search: 734/93, 73488-491, 734/95, 735/03, 735/143.2, 702/141, 702/187
• US Class Current: 73/493
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0278 Temperature sensors
• CPC Class Codes: B81B 2201/0292 Sensors not provided for in B81B2201/0207 - B81B2201/0285
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: G01P 2015/082 for two degrees of freedom of movement of a single mass
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
• CPC Class Codes: G01P 2015/0842 the mass being of clover leaf shape

Abstract

The MEMS Sensor Suite on a Chip provides the capability, monolithically integrated onto one MEMS chip, to sense temperature, humidity, and two axes of acceleration. The device incorporates a MEMS accelerometer, a MEMS humidity sensor, and a MEMS temperature sensor on one chip. These individual devices incorporate proof masses, suspensions, humidity sensitive capacitors, and temperature sensitive resistors (thermistors) all fabricated in a common fabrication process that allows them to be integrated onto one micromachined chip. The device can be fabricated in a simple micromachining process that allows its size to be miniaturized for embedded and portable applications. During operation, the sensor suite chip monitors temperature levels, humidity levels, and acceleration levels in two axes. External circuitry allows sensor readout, range selection, and signal processing.

Claims

1. A monolithically integrated micro-electromechanical sensor suite formed on a semiconductor chip, comprising:

a silicon-on-insulator accelerometer; and

a humidity sensor monolithically integrated with the silicon-on-insulator accelerometer.

wherein the silicon-on-insulator accelerometer and the humidity sensor are commonly fabricated from a shared active silicon layer.

2. The micro-electromechanical sensor suite of claim 1, further comprising:

a monolithically integrated temperature sensor.

3. The micro-electromechanical sensor suite of claim 1, wherein the accelerometer is a two-axis accelerometer.

4. The micro-electromechanical sensor suite of claim 1, wherein the accelerometer is a one-axis accelerometer.

5. The micro-electromechanical sensor suite of claim 1, wherein the accelerometer further comprises:

a moveable proof mass; and

one or more position sensors for measuring displacement of the proof mass upon acceleration of the chip.

6. The micro-electromechanical sensor suite of claim 5, wherein the one or more position sensors are capacitive position sensors.

7. The micro-electromechanical sensor suite of claim 1, wherein the humidity sensor further comprises:

a bottom metal electrode;

a humidity sensitive polymer layer; and

a top metal electrode.

8. The micro-electromechanical sensor suite of claim 7, wherein the top metal electrode is fabricated in a mesh pattern.

9. The micro-electromechanical sensor suite of claim 2, wherein the temperature sensor comprises a serpentine bridge of silicon.

13. The micro-electromechanical sensor suite of claim 2, wherein at least two of the accelerometer, the humidity sensor, and the temperature sensor are commonly fabricated from a shared layer.

10. A monolithically integrated micro-electromechanical sensor suite formed on a semiconductor chip, comprising:

a silicon-on-insulator accelerometer; and

a chemical sensor monolithically integrated with the silicon-on-insulator accelerometer,

wherein the silicon-on-insulator accelerometer and the chemical sensor are commonly fabricated from a shared active silicon layer.

11. The micro-electromechanical sensor suite of claim 10. further comprising at least one of a temperature sensor and a humidity sensor, wherein at least the one of the temperature sensor and the humidity sensor is commonly fabricated from a shared silicon layer and monolithically integrated with the silicon-on-insulator accelerometer.

12. The micro-electromechanical sensor suite of claim 11, wherein the temperature sensor comprises a serpentine bridge of doped silicon having a large temperature coefficient of resistance.