Chemical vapor deposition apparatus

• US 7,749,326 B2
• Filed: 07/21/2008
• Issued: 07/06/2010
• Est. Priority Date: 05/22/2008
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
• Inventors: Hong, Jong Pa, Kim, Chang Sung Sean, Ghim, Joong El
• Primary Examiner(s): Zervigon; Rudy
• Application Number:
  US12/177,037
• Publication Number:
  US 20090288604A1
• Time in Patent Office: 715 Days
• Field of Search: 118/715, 118/729, 118/730, 156/345.33, 156/345.55, 156/345.54
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45508 Radial flow
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45589 Movable means, e.g. fans

Abstract

Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

Claims

1. A chemical vapor deposition apparatus comprising:

a reaction chamber;

a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon;

a rotation driving unit that rotates the susceptor;

a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber;

a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and

a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet within the reaction chamber and is formed by superimposing a plurality of gas jetting plates having a plurality of holes, wherein the plurality of jetting plates are rings arranged in a concentric formation.

2. The chemical vapor deposition apparatus according to claim 1, wherein the plurality of gas jetting plates forming the variable gas-flow adjusting unit are superimposed toward the center of the reaction chamber from the outside of the reaction chamber.

3. The chemical vapor deposition apparatus according to claim 1, wherein the variable gas-flow adjusting unit adjusts the reaction gas flow, depending on the overlapping area of the holes which overlap each other when one or more gas jetting plates among the plurality of gas jetting plates are rotated.

4. The chemical vapor deposition apparatus according to claim 1, wherein the holes formed in the respective gas jetting plates forming the variable gas-flow adjusting unit are inclined in a direction eccentric with the rotation-axis center of the susceptor.

5. The chemical vapor deposition apparatus according to claim 4, wherein the direction of the reaction gas jetted through the variable gas-flow adjusting unit is adjusted by adjusting the inclination angle of the holes formed in the respective gas jetting plates.

6. The chemical vapor deposition apparatus according to claim 4, wherein the direction eccentric with the rotation-axis center of the susceptor is set to be reverse to the rotation direction of the susceptor.

7. The chemical vapor deposition apparatus according to claim 1, wherein the holes formed in the respective gas jetting plates forming the variable gas-flow adjusting unit have a circular, elliptical, or polygonal shape.

8. The chemical vapor deposition apparatus according to claim 1, wherein the holes formed in the respective gas jetting plates forming the variable gas-flow adjusting unit have a slit shape which extends in a horizontal or vertical direction.

9. The chemical vapor deposition apparatus according to claim 1, wherein the holes formed in the adjacent gas jetting plates among the plurality of gas jetting plates forming the variable gas-flow adjusting unit have the same shape.

10. The chemical vapor deposition apparatus according to claim 1, wherein the holes formed in the adjacent gas jetting plates among the plurality of gas jetting plates forming the variable gas-flow adjusting unit have different shapes from each other.

11. The chemical vapor deposition apparatus according to claim 1 further comprising:

a heating unit that is provided in one side of the susceptor so as to provide radiant heat to the susceptor.