Process margin using discrete assist features

• US 7,749,662 B2
• Filed: 10/07/2005
• Issued: 07/06/2010
• Est. Priority Date: 10/07/2005
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Matthew, Itty, Singh, Bhanwar
• Primary Examiner(s): Huff; Mark F
• Assistant Examiner(s): ALAM, RASHID A
• Application Number:
  US11/245,824
• Publication Number:
  US 20070082277A1
• Time in Patent Office: 1,733 Days
• Field of Search: 430/5, 430/311, 430/394, 716/19, 716/21, 700/121
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

The subject invention provides a system and method for improving the process margin of a lithographic imaging system. The process margin improvement is achieved through the novel placement of discrete assist features and/or the use of forbidden pitches and specific pitch orientations. Novel geometries are utilized, which take advantage of line-end pull back and/or a lack of resolution of pitches perpendicular to an axis of a dipole illumination source. The strategic placement of a series of discrete scatterbar segments on a mask near positions of critical features, such as, for example, contacts, mitigates resist residue that can result from the use of a contiguous scatterbar.

Claims

1. A method of improving a process margin of a lithographic imaging system, comprising:

identifying a semi-isolated pattern feature on a mask as a potential limiting factor to a process margin for a lithographic imaging technique;

determining a resolution threshold for the imaging technique;

determining a maximum size threshold for discrete scatterbar segments based at least in part on the determined resolution threshold for the imaging system and a known amount line-end pull back that occurs at the resolution threshold; and

mitigating a resist residue by placing a discrete scatterbar comprising more than one discrete sub-resolution scatterbar segment near the semi-isolated mask feature

Constructing the more than one discrete scatterbar segments with a pitch outside of a range of pitches that can be resolved perpendicular to an axis of a dipole illumination source, and within a range of pitches that can be resolved parallel to the axis of the dipole illumination source, and orienting the discrete scatterbar perpendicular to the axis to mitigate discrete scatterbar segments resolution by the imaging system.

2. The method of claim 1, further comprising constructing the more than one discrete scatterbar segments to be about the maximum threshold size in only one dimension transverse to incident illumination and larger than the maximum threshold size in a second transverse direction.

3. The method of claim 1, the at least one semi-isolated mask feature comprises a terminal feature in a series of mask features of uniform pitch.

4. The method of claim 3, the terminal feature comprises a mask pattern feature for imaging a wordline and the series of mask features comprises a series of mask pattern features for imaging a series of wordlines.

5. The method of claim 3, the terminal feature comprises a mask feature for imaging a bitline and the series of mask features comprises a series mask features for imaging a series of bitlines.

6. The method of claim 2, further comprising running a simulation for a depth of focus for the imaging system.

7. The method of claim 1, further comprising constructing the more than one discrete scatterbar segments with one or more pitches comprising forbidden pitches of the imaging system.

15. The method of claim 1, mitigating the resist residue comprises placing the discrete scatterbar perpendicular to a wordline.

16. The method of claim 1, mitigating the resist residue comprises placing the discrete scatterbar at a pitch consistent with a bitline pitch.

17. The method of claim 1, further comprising placing discrete scatterbar segments directly above bitlines.

18. The method of claim 1, further comprising placing discrete scatterbar segments between adjacent bitlines.

19. The method of claim 1, determining the maximum size threshold comprises selecting a line width narrower than a nominal line width of the semi-isolated feature such that the discrete scatterbar will not be resolved by the imaging system.

8. A photomask comprising:

one or more semi-isolated mask features; and

one or more discretized scatterbars positioned near at least one of the one or more semi-isolated mask features, the one or more discretized scatterbar comprises more than one discrete sub-resolution scatterbar segment wherein each of the more than one discrete sub-resolution scatterbar segments is constructed smaller than a predefined maximum segment size threshold in only one transverse direction to incident illumination and based on a determined line-end pull, below which the imaging system does not generate an image, the discretized scatterbars alter a pitch of the one or more semi-isolated mask features and mitigate photoresist residue after an exposure period.

9. The mask of claim 8, wherein the more than one discrete sub-resolution scatterbar segments comprise a forbidden pitch that is not resolvable by the imaging system.

10. The mask of claim 8, wherein the more than one discrete sub-resolution scatterbar segments comprise a pitch formed in an axis perpendicular to an axis of a dipole illumination source employed to expose a photoresist through the mask.

11. The mask of claim 8, at least one of the one or more semi-isolated mask features comprises a last feature in a series of uniformly sized and spaced features.

12. The mask of claim 11, the mask features form a pattern through which an exposure source can illuminate a photoresist on a wafer to generate an image of a pattern of word lines thereon.

13. A system that facilitates improving wafer yield after a photoresist exposure technique, comprising:

means for identifying a potential yield-limiting pattern feature on a photomask;

means for determining a maximum size threshold for discrete scatterbar segments based at least in part on a resolution limit perpendicular to an axis of a dipole illuminator, which is poorer than a resolution limit parallel to the dipole illuminator axis; and

means for mitigating a resist residue by generating a plurality of discrete scatterbar segments that are of a sub-resolution size relative the perpendicular resolution limit, and are not sub-resolution size relative the parallel resolution limit, and orienting the discrete scatterbar segments perpendicular to the axis of the dipole illuminator to mitigate scatterbar segment resolution

means for constructing the more than one discrete scatterbar segments with a pitch outside of a range of pitches that can be resolved perpendicular to an axis of a dipole illumination source, and within a range of pitches that can be resolved parallel to the axis of the dipole illumination source, and orienting the discrete scatterbar perpendicular to the axis to mitigate discrete scatterbar segments resolution by the imaging system.

14. The system of claim 13, further comprising:

means for positioning the plurality of scatterbar segments adjacent to the identified pattern feature and adjusting the pitch of the identified pattern feature; and

means for exposing the resist layer on the wafer through the photomask.