Organic semiconductor device and method for manufacturing the same
First Claim
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1. A method for manufacturing an organic semiconductor device comprising:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a source electrode and a drain electrode over the gate insulating film;
forming an organic semiconductor film over the gate insulating film, and the source electrode and the drain electrode; and
covering the organic semiconductor film by a tape by using a roller, an adhesive agent being applied to the tape.
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Abstract
It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.
41 Citations
26 Claims
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1. A method for manufacturing an organic semiconductor device comprising:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode; forming a source electrode and a drain electrode over the gate insulating film; forming an organic semiconductor film over the gate insulating film, and the source electrode and the drain electrode; and covering the organic semiconductor film by a tape by using a roller, an adhesive agent being applied to the tape. - View Dependent Claims (2, 3, 4, 5)
- forming a gate electrode over a substrate;
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6. A method for manufacturing an organic semiconductor device comprising:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode; forming a source electrode and a drain electrode over the gate insulating film; forming an organic semiconductor film over the gate insulating film, and the source electrode and the drain electrode; putting a sheet over the substrate, an adhesive agent being applied to the sheet; and
bonding the substrate and the sheet by using a roller. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
- forming a gate electrode over a substrate;
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14. A method for manufacturing an organic semiconductor device comprising:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode; forming an organic semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the organic semiconductor film; and covering the organic semiconductor film by a tape by using a roller, an adhesive agent being applied to the tape. - View Dependent Claims (15, 16, 17, 18)
- forming a gate electrode over a substrate;
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19. A method for manufacturing an organic semiconductor device comprising:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode; forming an organic semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the organic semiconductor film; putting a sheet over the substrate, an adhesive agent being applied to the sheet; and bonding the substrate and the sheet by using a roller. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
- forming a gate electrode over a substrate;
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsHirakata, Yoshiharu, Ishitani, Tetsuji, Imahayashi, Ryota, Fukai, Shuji
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Primary Examiner(s)Le; Thao P.
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Application NumberUS12/431,168Publication NumberTime in Patent Office434 DaysField of Search438/99, 257/E39.007US Class Current438/99CPC Class CodesB82Y 10/00 Nanotechnology for informat...H10K 10/466 Lateral bottom-gate IGFETs ...H10K 71/50 Forming devices by joining ...H10K 85/10 Organic polymers or oligomersH10K 85/111 comprising aromatic, hetero...H10K 85/113 Heteroaromatic compounds co...H10K 85/114 Poly-phenylenevinylene; Der...H10K 85/143 Polyacetylene; Derivatives ...H10K 85/611 Charge transfer complexesH10K 85/621 Aromatic anhydride or imide...H10K 85/761 Biomolecules or bio-macromo...
