Thin film transistor array panel and manufacturing method thereof
First Claim
1. A method of manufacturing a thin film transistor array panel, the method comprising:
- forming a gate line on a substrate;
forming a gate insulating layer on the gate line;
forming a semiconductor layer on the gate insulating layer;
forming an ohmic contact layer on the semiconductor layer;
forming a data line and a drain electrode on the ohmic contact layer;
depositing a passivation layer on the data line and the drain electrode;
forming a first photoresist layer on the passivation layer, wherein the first photoresist layer does not cover at least a portion of the passivation layer and the gate insulating layer;
etching the passivation layer and the gate insulating layer which are not covered by the first photoresist layer;
exposing a portion of the substrate;
transforming the first photoresist layer into a second photoresist layer, wherein the second photoresist layer does not cover at least a portion of the passivation layer;
etching the passivation layer which is not covered by the second photoresist layer;
exposing a portion of the drain electrode;
depositing a conductive film on the drain electrode and on the second photoresist layer, the conductive film including a first portion disposed on the second photoresist layer and a second portion at least partially separated from the first portion by gaps, the gaps exposing at least a portion of lateral sides of the second photoresist layer;
removing the second photoresist layer and the first portion of the conductive film; and
forming a pixel electrode on the portion of the drain electrode.
2 Assignments
0 Petitions
Accused Products
Abstract
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact on the semiconductor layer; forming a data line and a drain electrode on the ohmic contact; depositing a passivation layer on the data line and the drain electrode; forming a first photoresist layer on the passivation layer; etching the passivation layer and the gate insulating layer using the first photoresist layer as a mask to expose a portion of the drain electrode and a portion of the substrate; depositing a conductive film; and removing the photoresist layer; to form a pixel electrode on a portion of the drain electrode exposed by the etching of the passivation layer.
-
Citations
9 Claims
-
1. A method of manufacturing a thin film transistor array panel, the method comprising:
-
forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact layer on the semiconductor layer; forming a data line and a drain electrode on the ohmic contact layer; depositing a passivation layer on the data line and the drain electrode; forming a first photoresist layer on the passivation layer, wherein the first photoresist layer does not cover at least a portion of the passivation layer and the gate insulating layer; etching the passivation layer and the gate insulating layer which are not covered by the first photoresist layer; exposing a portion of the substrate; transforming the first photoresist layer into a second photoresist layer, wherein the second photoresist layer does not cover at least a portion of the passivation layer; etching the passivation layer which is not covered by the second photoresist layer; exposing a portion of the drain electrode; depositing a conductive film on the drain electrode and on the second photoresist layer, the conductive film including a first portion disposed on the second photoresist layer and a second portion at least partially separated from the first portion by gaps, the gaps exposing at least a portion of lateral sides of the second photoresist layer; removing the second photoresist layer and the first portion of the conductive film; and forming a pixel electrode on the portion of the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification