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Thin film transistor array panel and manufacturing method thereof

  • US 7,749,824 B2
  • Filed: 07/27/2005
  • Issued: 07/06/2010
  • Est. Priority Date: 07/27/2004
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin film transistor array panel, the method comprising:

  • forming a gate line on a substrate;

    forming a gate insulating layer on the gate line;

    forming a semiconductor layer on the gate insulating layer;

    forming an ohmic contact layer on the semiconductor layer;

    forming a data line and a drain electrode on the ohmic contact layer;

    depositing a passivation layer on the data line and the drain electrode;

    forming a first photoresist layer on the passivation layer, wherein the first photoresist layer does not cover at least a portion of the passivation layer and the gate insulating layer;

    etching the passivation layer and the gate insulating layer which are not covered by the first photoresist layer;

    exposing a portion of the substrate;

    transforming the first photoresist layer into a second photoresist layer, wherein the second photoresist layer does not cover at least a portion of the passivation layer;

    etching the passivation layer which is not covered by the second photoresist layer;

    exposing a portion of the drain electrode;

    depositing a conductive film on the drain electrode and on the second photoresist layer, the conductive film including a first portion disposed on the second photoresist layer and a second portion at least partially separated from the first portion by gaps, the gaps exposing at least a portion of lateral sides of the second photoresist layer;

    removing the second photoresist layer and the first portion of the conductive film; and

    forming a pixel electrode on the portion of the drain electrode.

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