Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices

• US 7,749,892 B2
• Filed: 11/29/2006
• Issued: 07/06/2010
• Est. Priority Date: 11/29/2006
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Restaino, Darryl D., Dimitrakopoulos, Christos D., Grill, Alfred, Nitta, Satyanarayana V., Bonilla, Griselda, Nguyen, Son V., Spooner, Terry A.
• Primary Examiner(s): SMITH, BRADLEY
• Application Number:
  US11/564,358
• Publication Number:
  US 20080122103A1
• Time in Patent Office: 1,315 Days
• Field of Search: 438/622, 438/624, 438/687, 438/627
• US Class Current: 438/624
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76844 Bottomless liners
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An interconnect in provided which comprises a copper conductor having both a top surface and a lower surface, with caps formed on the top surface of the metallic conductor. The cap is formed of dual laminations or multiple laminations of films with the laminated films including an Ultra-Violet (UV) blocking film and a diffusion barrier film. The diffusion barrier film and the UV blocking film may be separated by an intermediate film.

Claims

1. An interconnect comprising:

a metallic conductor having both a top surface and a lower surface;

a cap formed on said top surface of said metallic conductor with said cap being formed of laminated films with said laminated films including;

an Ultra-Violet (UV) blocking film;

a diffusion barrier film comprising SiCNH in a covalently bonded tri-dimensional network with a dielectric constant of less than 6;

said UV blocking film comprises a UV blocking high band gap film selected from the group consisting of nitrided carbon (CNx), boronitride, silicon boronitride, carbon boronitride, silicon carbon boronitride, and silicon carbon films adapted to be deposited in a Chemical Vapor Deposition (CVD) chamber, and films with lower band gap, but better mechanical, electrical, and Cu diffusion properties nitrided carbon (CN_x) and boron doped nitrided carbon (CB_xN_y); and

the SiCNH dielectric material comprises between about 5 and about 40, atomic percent of Si;

between about 5 and about 50 atomic percent of C;

between 0 and about 50 atomic percent of N; and

between about 10 and about 55 atomic percent of H with molecular scale voids comprising nanometer-sized pores therein between about 0.3 to about 10 nanometers in diameter;

with the nanometer-sized pores occupying between about 0.5% and about 50% of material volume; and

the films of the cap have a composite dielectric constant (k) with a value range of k less than 7 and greater than 3 (3<

k<

7).

2. A method of forming an interconnect comprising:

providing a metallic conductor having both a top surface and a lower surface; and

forming a cap on said top surface of said metallic conductor with said cap comprising laminated films with said laminated films including an Ultra-Violet (UV) blocking film and a diffusion barrier film comprising SiCNH in a covalently bonded tri-dimensional network with a dielectric constant of less than 6;

wherein the SiCNH dielectric material comprises between about 5 and about 40, atomic percent of Si;

between about 5 and about 50 atomic percent of C;

between 0 and about 50 atomic percent of N; and

between about 10 and about 55 atomic percent of H with molecular scale voids comprising nanometer-sized pores therein between about 0.3 to about 10 nanometers in diameter;

with the nanometer-sized pores occupying between about 0.5% and about 50% of material volume.

3. A method of forming an interconnect comprising:

providing a metallic conductor having both a top surface and a lower surface;

forming a cap on said top surface of said metallic conductor with said cap comprising laminated films with said laminated films including an Ultra-Violet (UV) blocking film and a diffusion barrier film comprising SiCNH in a covalently bonded tri-dimensional network with a dielectric constant of less than 6;

said adhesion film is selected from the group consisting of Si_aL_bR_c and a+b+c=1;

where “

L”

is selected from the group consisting of hydroxyl, methoxy, ethoxy, acetoxy, alkoxy, carboxy, amines, halogens;

where “

R”

is selected from the group consisting of hydride, methyl, ethyl, vinyl, phenyl-alky, and a phenyl-aryl;

where “

a”

ranges from about 0.25 to about 0.5, where “

b”

ranges from about 0.1 to about 0.8, and where “

c”

ranges from about 0 to about 0.7;

the SiCNH dielectric material comprises between about 5 and about 40 atomic percent of Si;

between about 5 and about 50 atomic percent of C;

between 0 and about 50 atomic percent of N; and

between about 10 and about 55 atomic percent of H with molecular scale voids comprising nanometer-sized pores therein between about 0.3 to about 10 nanometers in diameter;

with the nanometer-sized pores occupying between about 0.5% and about 50% of material volume; and

the films of the cap have a composite dielectric constant (k) with a value range of k less than 7 and greater than 3 (3<

k<

7).