Semiconductor device and manufacturing method of semiconductor device

• US 7,750,358 B2
• Filed: 11/13/2006
• Issued: 07/06/2010
• Est. Priority Date: 11/14/2005
• Status: Active Grant

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Shiraishi, Akinori, Higashi, Mitsutoshi
• Primary Examiner(s): Huynh; Andy
• Application Number:
  US11/598,030
• Publication Number:
  US 20070108461A1
• Time in Patent Office: 1,331 Days
• Field of Search: 257/81, 257/95, 257/98, 257/99, 257/100, 257/118, 257/704, 257/E33.061, 257/E33.067, 257/E33.068
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/644 in intimate contact or integrated with parts of the device other than the semiconductor body

Abstract

A semiconductor device made by mounting a light emitting element in a substrate, characterized in that an optically-transparent cover with a flat plate shape is installed on the light emitting element and a fluorescent substance film is formed on the cover.

Claims

1. A semiconductor device comprising:

a substrate having a recess part, the recess part having a periphery and a floor;

a light emitting element mounted within the recess part on the floor;

an optically-transparent cover with a flat plate shape made of electrically insulative material which is installed above the light emitting element; and

a fluorescent substance film formed on only a portion of the optically-transparent cover, the periphery of the recess part being directly bonded to a portion of the optically-transparent cover other than the portion on which the fluorescent substance film is formed.

2. A semiconductor device as claimed in claim 1, wherein the light emitting element comprises an LED.

3. A semiconductor device as claimed in claim 1, wherein the bonding of the periphery of the recess part to the portion of the cover other than the portion on which the fluorescent substance film is formed is configured such that the light emitting element is sealed within the substrate and the cover.

4. A semiconductor device as claimed in claim 3, further comprising:

a reflector for reflecting light emission of the light emitting element, which is installed in space in which the light emitting element is sealed.

5. A semiconductor device as claimed in claim 3, wherein the periphery of the recess part is anode-bonded to the portion of the cover other than the portion on which the fluorescent substance film is formed.

6. A semiconductor device as claimed in claim 1, further comprising:

a reflector for reflecting light emission of the light emitting element,

wherein the light emitting element is sealed by bonding the reflector to the cover and the substrate.

7. A semiconductor device as claimed in claim 1, wherein the substrate is made of Si.

8. A semiconductor device as claimed in claim 1, further comprising:

a through wiring which passes through the substrate and is electrically connected to the light emitting element.

9. A semiconductor device as claimed in claim 4, further comprising:

a heat dissipation wiring which is formed so as to pass through the substrate and is connected to the reflector.

11. A semiconductor device as claimed in claim 8, further comprising:

a bump on which the light emitting element is installed so that the light emitting element is electrically connected to the through wiring which is formed so as to pass through a bottom portion of the substrate through the bump.

18. A semiconductor device as claimed in claim 1, wherein the periphery of the recess part directly contacts the portion of the optically-transparent cover such that the direct bonding creates a seal at the contact between the periphery of the recess part and the portion of the optically-transparent cover to define a sealed space in which the light emitting element is disposed.

10. A manufacturing method of a semiconductor device, comprising:

mounting a light emitting element on a substrate within a recess part of the substrate, the recess part of the substrate having a periphery and a floor, with the light emitting element being mounted on the floor;

installing an optically-transparent cover made of electrically insulative material, which has a flat plate shape and a fluorescent substance film formed on only a portion of the optically-transparent cover, above the substrate; and

sealing the light emitting element using the optically-transparent cover by directly bonding the periphery of the recess part and the portion of the optically-transparent cover other than the portion on which the fluorescent substance film is formed.

12. A manufacturing method of a semiconductor device as claimed in claim 10, wherein the mounting of the light emitting element comprises mounting an LED on the substrate.

13. A manufacturing method of a semiconductor device as claimed in claim 10, wherein the bonding of the periphery of the recess part and the portion of the cover other than the portion on which the fluorescent substance film is formed comprises anode bonding.

14. A manufacturing method of a semiconductor device as claimed in claim 13, further comprising:

installing a reflector for reflecting light emission of the light emitting element in the recess part in which the light emitting element is sealed.

15. The manufacturing method of a semiconductor device as claimed in claim 10, wherein the substrate is made of Si.

16. A manufacturing method of a semiconductor device as claimed in claim 10, wherein the substrate comprises Si, the cover comprises glass, and the bonding of the portion of the cover other than the portion on which the substance film is formed with the periphery of the recess part of the substrate comprises anode bonding the Si and the glass.

17. A manufacturing method of a semiconductor device as claimed in claim 10, further comprising:

forming a through wiring so as to pass through a floor of the substrate and so as to be electrically connected to the light emitting element.

19. A manufacturing method of a semiconductor device as claimed in claim 10, wherein in the direct bonding the periphery of the recess part directly contacts the portion of the optically-transparent cover such that the direct bonding creates a seal at the contact between the periphery of the recess part and the portion of the optically-transparent cover to define a sealed space in which the light emitting element is disposed.