High voltage and high power boost converter with co-packaged Schottky diode
First Claim
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1. A boost converter comprising:
- a boost converter integrated circuit comprising a controller and an N-type field effect transistor (NFET), wherein the controller and the N-type field effect transistor (NFET) are formed on a common semiconductor chip; and
a vertical discrete Schottky diode having a top anode and a bottom cathode wherein the boost converter integrated circuit and the vertical discrete Schottky diode are co-packaged on a common die pad,wherein the boost converter integrated circuit is mounted to a first die pad and the vertical discrete Schottky diode is mounted to a second die pad and wherein the first and second die pads are attached to the common die pad.
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Abstract
A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.
39 Citations
13 Claims
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1. A boost converter comprising:
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a boost converter integrated circuit comprising a controller and an N-type field effect transistor (NFET), wherein the controller and the N-type field effect transistor (NFET) are formed on a common semiconductor chip; and a vertical discrete Schottky diode having a top anode and a bottom cathode wherein the boost converter integrated circuit and the vertical discrete Schottky diode are co-packaged on a common die pad, wherein the boost converter integrated circuit is mounted to a first die pad and the vertical discrete Schottky diode is mounted to a second die pad and wherein the first and second die pads are attached to the common die pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification