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High voltage and high power boost converter with co-packaged Schottky diode

  • US 7,750,447 B2
  • Filed: 06/11/2007
  • Issued: 07/06/2010
  • Est. Priority Date: 06/11/2007
  • Status: Active Grant
First Claim
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1. A boost converter comprising:

  • a boost converter integrated circuit comprising a controller and an N-type field effect transistor (NFET), wherein the controller and the N-type field effect transistor (NFET) are formed on a common semiconductor chip; and

    a vertical discrete Schottky diode having a top anode and a bottom cathode wherein the boost converter integrated circuit and the vertical discrete Schottky diode are co-packaged on a common die pad,wherein the boost converter integrated circuit is mounted to a first die pad and the vertical discrete Schottky diode is mounted to a second die pad and wherein the first and second die pads are attached to the common die pad.

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