Semiconductor device
First Claim
1. A semiconductor device comprising:
- an antenna and an integrated circuit which are formed over the same substrate,wherein the antenna includes a base layer and a copper plating layer formed over the base layer,wherein a lower wiring is formed below the base layer,wherein the base layer comprises a nitride film of an alloy, andwherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum.
1 Assignment
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Accused Products
Abstract
An object of the present invention is to prevent electrical characteristics of circuit elements from being adversely affected by copper diffusion in a semiconductor device having an integrated circuit and an antenna formed over the same substrate, which uses copper plating for the antenna. Another object is to prevent a defect of a semiconductor device due to poor connection between an antenna and an integrated circuit in a semiconductor device having the integrated circuit and the antenna formed over the same substrate. In a semiconductor device having an integrated circuit 100 and an antenna 101 formed over one substrate 102, when a copper plating layer 108 is used for a conductor of the antenna 101, it is possible to prevent copper diffusion to circuit elements and decrease an adverse effect on electrical characteristics of circuit elements due to the copper diffusion because a base layer 107 of the antenna 101 uses a nitride film of a predetermined metal. Moreover, by the use of nickel nitride as a metal nitride for the base layer of the antenna, poor connection between the antenna and the integrated circuit can be decreased.
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Citations
7 Claims
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1. A semiconductor device comprising:
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an antenna and an integrated circuit which are formed over the same substrate, wherein the antenna includes a base layer and a copper plating layer formed over the base layer, wherein a lower wiring is formed below the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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an antenna and an integrated circuit which are formed over the same substrate, wherein the antenna includes a first base layer, a second base layer formed over the first base layer, and a copper plating layer formed over the second base layer, wherein the first base layer comprises a nitride film of any of titanium, tantalum, tungsten, or molybdenum, and wherein the second base layer comprises a nickel nitride film. - View Dependent Claims (5, 6, 7)
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Specification