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Biosensor containing ruthenium, measurement using the same and application thereof

  • US 7,754,056 B2
  • Filed: 06/09/2006
  • Issued: 07/13/2010
  • Est. Priority Date: 11/01/2005
  • Status: Expired due to Fees
First Claim
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1. A preparation method for a biosensor comprising an extended gate ion-sensitive field effect transistor structure, the method comprising the steps of:

  • providing an extended gate ion sensitive field effect transistor comprising an extended gate region;

    forming a ruthenium-containing film on the extended gate region by radio frequency (RF) sputtering, wherein the ruthenium-containing film is ruthenium nitride; and

    packaging the extended gate region with an insulating layer with the ruthenium-containing film exposed to obtain a biosensor.

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