Biosensor containing ruthenium, measurement using the same and application thereof
First Claim
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1. A preparation method for a biosensor comprising an extended gate ion-sensitive field effect transistor structure, the method comprising the steps of:
- providing an extended gate ion sensitive field effect transistor comprising an extended gate region;
forming a ruthenium-containing film on the extended gate region by radio frequency (RF) sputtering, wherein the ruthenium-containing film is ruthenium nitride; and
packaging the extended gate region with an insulating layer with the ruthenium-containing film exposed to obtain a biosensor.
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Abstract
A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.
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10 Claims
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1. A preparation method for a biosensor comprising an extended gate ion-sensitive field effect transistor structure, the method comprising the steps of:
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providing an extended gate ion sensitive field effect transistor comprising an extended gate region; forming a ruthenium-containing film on the extended gate region by radio frequency (RF) sputtering, wherein the ruthenium-containing film is ruthenium nitride; and packaging the extended gate region with an insulating layer with the ruthenium-containing film exposed to obtain a biosensor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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