Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode
First Claim
1. A method for making a light-emitting diode, comprising the steps of:
- providing a substrate having a plurality of recessed portions on one main surface, each of the recessed portions having a floor and sidewalls;
growing a first nitride-based III-V group compound semiconductor layer (1) initially only from the floors of the recessed portions without using a mask so that the first nitride-based III-V group compound semiconductor initially exhibits a triangle in section in each recessed portion and having the floors of the recessed portions as bases, (2) thereafter continuing to grow the first nitride-based III-V group compound semiconductor until it r buries the recessed portion, (3) thereafter continuing to grow the first nitride-based III-V group compound semiconductor under such conditions that lateral growth is predominant until the first nitride-based III-V group semiconductor from adjacent recessed portions mutually contact each other, and (4) continuing to grow the first nitride-based III-V group compound semiconductor at least until it forms a first nitride-based III-V group layer with a planar surface;
growing a second nitride-based III-V group compound semiconductor layer on the first nitride-based III-V group compound semiconductor layer; and
successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.
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Accused Products
Abstract
A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.
28 Citations
13 Claims
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1. A method for making a light-emitting diode, comprising the steps of:
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providing a substrate having a plurality of recessed portions on one main surface, each of the recessed portions having a floor and sidewalls; growing a first nitride-based III-V group compound semiconductor layer (1) initially only from the floors of the recessed portions without using a mask so that the first nitride-based III-V group compound semiconductor initially exhibits a triangle in section in each recessed portion and having the floors of the recessed portions as bases, (2) thereafter continuing to grow the first nitride-based III-V group compound semiconductor until it r buries the recessed portion, (3) thereafter continuing to grow the first nitride-based III-V group compound semiconductor under such conditions that lateral growth is predominant until the first nitride-based III-V group semiconductor from adjacent recessed portions mutually contact each other, and (4) continuing to grow the first nitride-based III-V group compound semiconductor at least until it forms a first nitride-based III-V group layer with a planar surface; growing a second nitride-based III-V group compound semiconductor layer on the first nitride-based III-V group compound semiconductor layer; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification