Method of removing the growth substrate of a semiconductor light emitting device
First Claim
1. A method comprising:
- providing a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein a plurality of vias are etched through the p-type region and light emitting layer to expose portions of the n-type region, a plurality of metal n-contacts are disposed in the plurality of vias, and a metal p-contact is disposed on at least a portion of the p-type region disposed between two of the plurality of vias;
attaching the semiconductor structure to a carrier by at least one interconnect;
introducing an underfill in a cavity between the semiconductor structure and the carrier, wherein the underfill provides a rigid support for the semiconductor structure; and
removing the growth substrate;
wherein the underfill provides a rigid support for the semiconductor structure during removal of the growth substrate.
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Accused Products
Abstract
A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.
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Citations
20 Claims
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1. A method comprising:
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providing a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein a plurality of vias are etched through the p-type region and light emitting layer to expose portions of the n-type region, a plurality of metal n-contacts are disposed in the plurality of vias, and a metal p-contact is disposed on at least a portion of the p-type region disposed between two of the plurality of vias; attaching the semiconductor structure to a carrier by at least one interconnect; introducing an underfill in a cavity between the semiconductor structure and the carrier, wherein the underfill provides a rigid support for the semiconductor structure; and removing the growth substrate; wherein the underfill provides a rigid support for the semiconductor structure during removal of the growth substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification