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Method of removing the growth substrate of a semiconductor light emitting device

  • US 7,754,507 B2
  • Filed: 06/09/2005
  • Issued: 07/13/2010
  • Est. Priority Date: 06/09/2005
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein a plurality of vias are etched through the p-type region and light emitting layer to expose portions of the n-type region, a plurality of metal n-contacts are disposed in the plurality of vias, and a metal p-contact is disposed on at least a portion of the p-type region disposed between two of the plurality of vias;

    attaching the semiconductor structure to a carrier by at least one interconnect;

    introducing an underfill in a cavity between the semiconductor structure and the carrier, wherein the underfill provides a rigid support for the semiconductor structure; and

    removing the growth substrate;

    wherein the underfill provides a rigid support for the semiconductor structure during removal of the growth substrate.

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