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Process for etching tungsten silicide overlying polysilicon particularly in a flash memory

  • US 7,754,610 B2
  • Filed: 06/02/2006
  • Issued: 07/13/2010
  • Est. Priority Date: 06/02/2006
  • Status: Expired due to Fees
First Claim
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1. A method of etching a tungsten-containing layer overlying a silicon layer, comprising the steps of:

  • placing onto an electrode in a plasma reaction chamber a substrate containing the tungsten-containing layer and an etching mask overlying the tungsten-containing layer, wherein the silicon layer consists principally of silicon;

    a first step of flowing into the chamber a first gas mixture comprising an etching gas comprising NF3 and Cl2 and an oxidizing gas comprising oxygen gas and nitrogen gas;

    biasing the electrode with a first level of RF power;

    applying a second level of RF power to excite the first gas mixture into a first plasma to thereby etch at least the tungsten-containing layer sufficiently that at least some of the silicon layer is exposed;

    a subsequent second step of flowing into the chamber a second gas mixture comprising the etching gas having a smaller fraction of NF3 than in the first step and the oxidizing gas having a larger fraction of nitrogen gas than in the first step;

    biasing the electrode with a third level of RF power greater than the first level; and

    applying a fourth level of RF power to excite the second gas mixture into a second plasma to thereby etch possibly remaining portions of the tungsten-containing layer remaining before the second gas mixture had been excited into the second plasma.

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