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Process for producing zirconium oxide thin films

  • US 7,754,621 B2
  • Filed: 09/28/2007
  • Issued: 07/13/2010
  • Est. Priority Date: 04/14/2000
  • Status: Expired due to Fees
First Claim
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1. An atomic layer deposition method for forming a film on a substrate, comprising:

  • providing the substrate in a reaction space;

    depositing a zirconium oxide film on the substrate by exposing the substrate in the reaction space to temporally separated pulses of a zirconium-containing material and an oxygen-containing material, wherein the zirconium source material comprises a ligand selected from the group consisting of a cyclopentadienyl and a cyclopentadienyl derivative; and

    maintaining the substrate at a temperature below a decomposition temperature of the zirconium-containing material during depositing the zirconium oxide film.

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