Large format thermoelectric infrared detector and method of fabrication

• US 7,755,048 B2
• Filed: 05/30/2007
• Issued: 07/13/2010
• Est. Priority Date: 05/30/2006
• Status: Active Grant

• Current Assignee: Nytell Software LLC (Intellectual Ventures LLC)
• Original Assignee: Aprolase Development Co LLC (Intellectual Ventures LLC)
• Inventors: Hsu, Ying
• Primary Examiner(s): Porta; David P
• Assistant Examiner(s): LEE, SHUN K
• Application Number:
  US11/807,671
• Publication Number:
  US 20100031992A1
• Time in Patent Office: 1,140 Days
• Field of Search: 250/338.1
• US Class Current: 250/338.1
• CPC Class Codes: G01J 5/12 using thermoelectric elements, e.g. thermocouples
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device

Abstract

The thermoelectric detector consists of an absorber structure supported by two electrically connected beams made of thermoelectric materials such as polysilicon, polysilicon/germanium, bismuth-telluride, skutterrides, superlattice structures, nano-composites and other materials. One end of the thermoelectric beam connects to the absorber structure; the other end connects to the substrate. Infrared radiation incident on the absorber heats up the absorber, resulting in a temperature gradient along the length of the thermoelectric legs, and generating an electrical voltage. The detector arrays are fabricated using micromachining process. The absorber structure is formed over a sacrificial material that is removed at the end of the processing, leaving the detector suspended and thermally isolated. The sacrificial processing method enables the production of small pixel thermoelectric detectors in large two-dimensional arrays with high sensitivity.

Claims

1. A thermoelectric detector device comprising:

a plate structure coupled to at least one thermoelectric structure at a hot junction; and

a substrate coupled to the at least one thermoelectric structure at a cold junction;

wherein the plate structure is parallel to and offset from the substrate by a first distance, and wherein the at least one thermoelectric structure is adjacent to at least two edges of the plate structure.

2. The device of claim 1, wherein the at least one thermoelectric structure comprises at least one of bismuth-telluride, antimony-telluride, lead telluride, polysilicon, germanium, skutterudite, a nano-composite material, and a super-lattice structure.

3. The device of claim 1, wherein the plate structure comprises an infrared-absorbing material.

4. The device of claim 1, wherein the substrate comprises a reflector.

5. The device of claim 1, wherein the first distance is substantially a quarter wavelength of a pre-selected detector wavelength, and wherein the plate structure and the substrate are configured to act as a quarter-wave resonant cavity.

6. The device of claim 1, wherein the substrate comprises an integrated circuit electrically connected to the at least one thermoelectric structure.

7. The device of claim 1, further comprising a vacuum enclosure coupled to the substrate to thereby enclose the plate structure.

8. The device of claim 7, wherein the vacuum enclosure further comprises gas-absorbing materials.

9. The device of claim 1, wherein the at least one thermoelectric structure comprises two legs that are substantially orthogonal to each other.

10. The device of claim 1, wherein:

the at least one thermoelectric structure comprises first and second thermoelectric structures;

the first thermoelectric structure is coupled to the plate structure at the hot junction and to the substrate at the cold junction;

the second thermoelectric structure is coupled to the plate structure at another hot junction and to the substrate at another cold junction; and

the first thermoelectric structure is electrically connected to the second thermoelectric structure between the hot junction and the other hot junction.

11. The device of claim 10, wherein the first thermoelectric structure comprises a p-type semiconductor and the second thermoelectric structure comprises an n-type semiconductor.

12. A thermoelectric detector array comprising:

a plurality of thermoelectric structures coupled to a substrate, wherein each thermoelectric structure is coupled to the substrate at a cold junction; and

a plurality of plate structures, wherein each plate structure is coupled to at least one of the plurality of thermoelectric structures at a hot junction and is parallel to and offset from the substrate by a distance;

wherein each thermoelectric structure comprises two legs that are substantially orthogonal to each other.

13. The thermoelectric detector array of claim 12, wherein the plurality of thermoelectric structures comprise at least one of bismuth-telluride, antimony-telluride, lead telluride, polysilicon, germanium, skutterudite, a nano-composite material, and a super-lattice structure.

14. The thermoelectric detector array of claim 12, wherein:

each of the plurality of plate structures comprises an infrared-absorbing material;

the substrate comprises a plurality of reflectors;

the distance is substantially a quarter wavelength of a pre-selected detector wavelength; and

each plate structure is paired with one of the plurality of reflectors and configured to act as a quarter-wave resonant cavity.

15. The thermoelectric detector array of claim 12, wherein the substrate comprises an integrated circuit electrically connected to each of the plurality of thermoelectric structures and configured to individually detect an amount of radiation incident on each of the plurality of plate structures.

16. The thermoelectric detector array of claim 12, further comprising at least one vacuum enclosure coupled to the substrate to thereby enclose the plate structures, wherein the vacuum enclosure further comprises gas absorbing materials.

17. The thermoelectric detector array of claim 12, wherein each thermoelectric structure is disposed beside at least two edges of one of the plurality of plate structures.

18. The thermoelectric detector array of claim 12, wherein:

the plurality of thermoelectric structures comprises first and second thermoelectric structures;

each of the plurality of plate structures is coupled to the first thermoelectric structure at the hot junction and to the second thermoelectric structure at another hot junction; and

the first thermoelectric structure is electrically connected to the second thermoelectric structure between the hot junction and the other hot junction.

19. The thermoelectric detector array of claim 18, wherein the first thermoelectric structure comprises a p-type semiconductor and the second thermoelectric structure comprises an n-type semiconductor.

20. A method of making a thermoelectric detector, the method comprising:

forming a sacrificial layer on a substrate;

forming a plate structure on the sacrificial layer;

forming at least one thermoelectric structure on the sacrificial layer; and

removing the sacrificial layer;

wherein a first end of the at least one thermoelectric structure is coupled to the plate structure and a second end of the at least one thermoelectric structure is coupled to the substrate, wherein the plate structure is parallel to and offset from the substrate by a first distance, and wherein the at least one thermoelectric structure is configured to at least partially encircle a perimeter of the plate structure.

21. The method of claim 20, wherein a portion of the at least one thermoelectric structure is located on a first edge of the plate structure.

22. The method of claim 20, wherein at least a portion of the at least one thermoelectric structure is located on a second edge of the plate structure.

23. The method of claim 20, further comprising forming at least one blind via through the sacrificial layer for the at least one thermoelectric structure.

24. The method of claim 23, further comprising forming an adhesion promoter in the at least one blind via.

25. The method of claim 20, wherein the at least one thermoelectric structure comprises at least one of bismuth-telluride, antimony-telluride, lead telluride, polysilicon, germanium, skutterudite, a nano-composite material, and a super-lattice structure.

26. The method of claim 20, further comprising forming an infrared-absorbing material on the plate structure.

27. The method of claim 20, further comprising forming a passivation layer and a reflector on the substrate.

28. The method of claim 20, wherein the sacrificial layer is a sublimating polymer.

29. The method of claim 20, wherein said forming at least one thermoelectric structure comprises forming a first thermoelectric structure comprising a p-type semiconductor and forming a second thermoelectric structure comprising an n-type semiconductor.

30. The method of claim 20, further comprising forming a multi-layer support layer for supporting the plate structure.

31. The method of claim 20, wherein the at least one thermoelectric structure is disposed adjacent to at least two edges of the plate structure.