Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
First Claim
1. A semiconductor light emitting device comprising:
- a substrate;
a semiconductor multilayer structure formed on one of a plurality of main surfaces of the substrate, the semiconductor multilayer structure including a light emitting layer;
a first electrode and a second electrode formed on the semiconductor multilayer structure, power being supplied to the semiconductor multilayer structure through the first electrode and the second electrode causing the light emitting layer to emit light; and
a phosphor film covering at least an entire main surface of the semiconductor multilayer structure which faces away from the substrate, whereinthe semiconductor multilayer structure is divided into a plurality of portions by a division groove, and each of the plurality of portions is an independent light emitting element,each of a plurality of light emitting elements have a diode structure, and includes an anode electrode and a cathode electrode, and an insulating film is formed on a side surface of each of the plurality of light emitting elements,the plurality of light emitting elements are connected in series such that a cathode electrode of a light emitting element is connected to an anode electrode of a different light emitting element using a wire formed by a thin metal film formed on the insulating film, andone of an anode electrode of one of the plurality of light emitting elements at a higher potential end of an array of the plurality of light emitting elements is the first electrode, and one of a cathode electrode of one of the plurality of light emitting elements at a lower potential end of the array of the plurality of light emitting elements is the second electrode.
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Accused Products
Abstract
In an LED array chip (2), LEDs (6) are connected together in series by a bridging wire (30) The LEDs (6) each have a semiconductor multilayer structure (8-18) including a light emitting layer (14) Here, the semiconductor multilayer structure (8-18) is epitaxially grown on a front surface of an SiC substrate (4) A phosphor film (48) covers the LEDs (6) Two power supply terminals (36 and 38), which are electrically independent from each other, are formed on a back surface of the SiC substrate (4) The power supply terminal (36) is connected to a cathode electrode (32) of an LED (6a) at a lower potential end by a bridging wire (40) and a plated-through hole (42) The power supply terminal (38) is connected to an anode electrode (34) of an LED (6d) at a higher potential end by a bridging wire (44) and a plated-through hole (46).
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Citations
33 Claims
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1. A semiconductor light emitting device comprising:
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a substrate; a semiconductor multilayer structure formed on one of a plurality of main surfaces of the substrate, the semiconductor multilayer structure including a light emitting layer; a first electrode and a second electrode formed on the semiconductor multilayer structure, power being supplied to the semiconductor multilayer structure through the first electrode and the second electrode causing the light emitting layer to emit light; and a phosphor film covering at least an entire main surface of the semiconductor multilayer structure which faces away from the substrate, wherein the semiconductor multilayer structure is divided into a plurality of portions by a division groove, and each of the plurality of portions is an independent light emitting element, each of a plurality of light emitting elements have a diode structure, and includes an anode electrode and a cathode electrode, and an insulating film is formed on a side surface of each of the plurality of light emitting elements, the plurality of light emitting elements are connected in series such that a cathode electrode of a light emitting element is connected to an anode electrode of a different light emitting element using a wire formed by a thin metal film formed on the insulating film, and one of an anode electrode of one of the plurality of light emitting elements at a higher potential end of an array of the plurality of light emitting elements is the first electrode, and one of a cathode electrode of one of the plurality of light emitting elements at a lower potential end of the array of the plurality of light emitting elements is the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A manufacturing method for a semiconductor light emitting device, comprising the steps of:
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forming a semiconductor multilayer structure including a light emitting layer on one of a plurality of main surfaces of a substrate; dividing the semiconductor multilayer structure into a plurality of portions each of which corresponds to a semiconductor light emitting device; forming a phosphor film on and around each of the plurality of portions of the semiconductor multilayer structure; dividing the substrate for each of the plurality of portions of the semiconductor multilayer structure; and connecting the plurality of portions of the semiconductor multilayer structure in series using a thin metal wire. - View Dependent Claims (17, 18)
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19. An array of a plurality of light emitting elements formed on a substrate, wherein
the light emitting elements are covered with a phosphor layer, a first light emitting element included in the light emitting elements is formed by laminating a first conductive layer to which a first electrode is connected, a light emitting layer, and a second conductive layer to which a second electrode is connected, on the substrate in this order, a second light emitting element included in the light emitting elements is formed by laminating a first conductive layer to which a first electrode is connected, a light emitting layer, and a second conductive layer to which a second electrode is connected, on the substrate in this order, the second light emitting element being adjacent to the first light emitting element, the first electrode included in the first light emitting element is electrically connected to the second electrode included in the second light emitting element by a metal film, and the first and the second light emitting elements are separated from each other by a groove.
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33. A semiconductor light emitting device comprising:
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a substrate; a plurality of light emitting elements connected in series formed on the substrate and separated by division grooves, the plurality of light elements including only one external cathode electrode and only one external anode electrode, each of the plurality of light emitting elements including a first electrode located above the substrate, a light reflecting layer located above the substrate, a light emitting layer located above the light reflecting layer, and a second electrode located above the light emitting layer, wherein, a first electrode of a first light emitting element at a lower potential end of the plurality of lighting elements is the one external cathode electrode, and a second electrode of a second light emitting element at a higher potential end of the plurality of lighting elements is the one external anode electrode; and a phosphorus layer covering all of the substrate and the plurality of light emitting elements.
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Specification