Zinc oxide light emitting diode

• US 7,755,098 B2
• Filed: 04/07/2009
• Issued: 07/13/2010
• Est. Priority Date: 04/11/2008
• Status: Expired due to Fees

• Current Assignee: Gwangju Institute of Science and Technology
• Original Assignee: Gwangju Institute of Science and Technology
• Inventors: Choi, Yong-Seok, Kwon, Min-Ki, Oh, Min-Suk, Park, Seong-Ju, Hwang, Dae-Kue
• Primary Examiner(s): Huynh; Andy
• Assistant Examiner(s): HO, HOANG QUAN TRAN
• Application Number:
  US12/419,706
• Publication Number:
  US 20090256148A1
• Time in Patent Office: 462 Days
• Field of Search: None
• US Class Current: 257/98
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table

Abstract

Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.

Claims

1. A zinc oxide light emitting diode, comprising:

an n-type semiconductor layer;

a zinc oxide active layer formed on the n-type semiconductor layer;

a p-type semiconductor layer formed on the active layer;

an anode in electrical contact with the p-type semiconductor layer;

a cathode in electrical contact with the n-type semiconductor layer; and

a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer.

2. The zinc oxide light emitting diode according to claim 1, wherein the surface plasmon layer contains one selected from the group consisting of gold, silver, aluminum and copper.

3. The zinc oxide light emitting diode according to claim 2, wherein the surface plasmon layer is formed in an island, mesh or linear shape.

4. The zinc oxide light emitting diode according to claim 1, wherein the n-type semiconductor layer includes an n-type contact layer and an n-type clad layer, which are sequentially stacked, and the p-type semiconductor layer includes a p-type clad layer and a p-type contact layer, which are sequentially stacked.