Capacitor and resistor having anodic metal and anodic metal oxide structure

• US 7,755,164 B1
• Filed: 06/21/2006
• Issued: 07/13/2010
• Est. Priority Date: 06/21/2006
• Status: Active Grant

• Current Assignee: Amkor Technology Singapore Holding Pte., Ltd. (Amkor Technology Incorporated)
• Original Assignee: Amkor Technology Incorporated
• Inventors: Rinne, Glenn A.
• Primary Examiner(s): Landau; Matthew C
• Assistant Examiner(s): WOLVERTON, DAREN A
• Application Number:
  US11/472,874
• Time in Patent Office: 1,483 Days
• Field of Search: 257531-533, 257/384, 257/393, 257/528, 257/536, 257/537, 257/E21.004, 257/E21.006, 257/E21.009, 257/E21.011, 257/E21.022, 257/E27.116, 361/821
• US Class Current: 257/532
• CPC Class Codes: H01L 27/016 Thin-film circuits
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

An anodic metal layer, e.g., a tantalum layer, is deposited. An anodization mask is formed, the anodization mask exposing first portions of the tantalum layer and covering second portion of the tantalum layer. The exposed first portions of the tantalum layer are anodized to form a tantalum pentoxide layer. The amount of the tantalum layer converted to the tantalum pentoxide layer is precisely controlled by the applied anodization potential. Accordingly, the thicknesses of the remaining tantalum layer and the formed tantalum pentoxide layer are precisely controlled allowing the values of passive devices, e.g., resistors and capacitors, formed with the tantalum layer and/or the tantalum pentoxide layer to be precisely set.

Claims

1. A passive device structure comprising a capacitor, the capacitor comprising:

a first electrode;

a second electrode; and

a dielectric structure comprising a conductive layer and a dielectric layer between the first electrode and the second electrode, the dielectric layer comprising a metal oxide selected from the group consisting of aluminum oxide, niobium oxide, titanium oxide, tungstic oxide, zirconium oxide, and tantalum oxide, wherein the dielectric structure has a first width greater than a second width of the second electrode, the passive device structure further comprising a resistor, the resistor comprising;

a first contact;

a second contact, wherein the first electrode, the first contact, and the second contact are portions of a first metal layer;

a resistive structure electrically connected to the first contact and the second contact, the resistive structure comprising;

a conductive layer; and

a dielectric layer comprising a metal oxide selected from the group consisting of aluminum oxide, niobium oxide, titanium oxide, tungstic oxide, zirconium oxide, and tantalum oxide.

2. The passive device structure of claim 1 wherein the conductive layer of the resistive structure comprises tantalum.

3. The passive device structure of claim 1 wherein the conductive layer of the resistive structure comprises titanium.

4. The passive device structure of claim 1 wherein the resistive structure is a trilayer structure comprising:

the conductive layer of the resistive structure;

an anodic metal layer comprising an anodic metal on the conductive layer of the resistive structure; and

the dielectric layer of the resistive structure on the anodic metal layer, the metal oxide of the resistive structure being an oxide of the anodic metal.

5. The passive device structure of claim 1 further comprising a first primary dielectric layer enclosing the contacts and the resistive structure.

6. The passive device structure of claim 1 wherein the conductive layer of the dielectric structure comprises tantalum.

7. The passive device structure of claim 1 wherein the conductive layer of the dielectric structure comprises titanium.

8. The passive device structure of claim 1 wherein the dielectric structure is a trilayer structure comprising:

the conductive layer;

an anodic metal layer comprising an anodic metal on the conductive layer; and

the dielectric layer on the anodic metal layer, the metal oxide being an oxide of the anodic metal.

9. The passive device structure of claim 1 wherein the first electrode and the second electrode comprise copper.

10. The passive device structure of claim 1 further comprising a first primary dielectric layer enclosing the first electrode and the dielectric structure.

11. The passive device structure of claim 1 further comprising a second capacitor, the second capacitor being selected from the group consisting of a copper/polyimide/copper capacitor and a copper/bisbenzocyclobutene/copper capacitor.

12. The passive device structure of claim 1 further comprising an inductor.

13. A passive device structure comprising a capacitor, a resistor, and an inductor, the capacitor comprising:

a first electrode;

a second electrode; and

a dielectric structure comprising a conductive layer and a dielectric layer between the first electrode and the second electrode, the dielectric layer comprising a metal oxide selected from the group consisting of aluminum oxide, niobium oxide, titanium oxide, tungstic oxide, zirconium oxide, and tantalum oxide,

the inductor comprising;

a cross under;

the resistor comprising;

a first contact;

a second contact, wherein the first electrode, the first contact, the second contact, and the cross under are portions of a first metal layer.

14. The passive device structure of claim 13 wherein the first metal layer is formed on a principal surface of a principal dielectric layer.

15. The passive device structure of claim 13 wherein the inductor further comprises:

a first trace;

a first via electrically connecting the first trace to the cross under;

a second trace; and

a second via electrically connecting the second trace to the cross under.

16. The passive device structure of claim 15 wherein the inductor further comprises:

a conductor, wherein the conductor, the first trace and the second trace are portions of a second metal layer.

17. A passive device structure comprising a capacitor, a resistor, and an inductor, the capacitor comprising:

a first electrode;

a second electrode; and

a dielectric structure comprising a conductive layer and a dielectric layer between the first electrode and the second electrode, the dielectric layer comprising a metal oxide selected from the group consisting of aluminum oxide, niobium oxide, titanium oxide, tungstic oxide, zirconium oxide, and tantalum oxide,

the inductor comprising;

a cross under;

a first trace;

a first via electrically connecting the first trace to the cross under;

a second trace;

a second via electrically connecting the second trace to the cross under; and

a conductor,

wherein the resistor comprises;

a first contact;

a second contact;

a resistive structure electrically connected to the first contact and the second contact, the resistive structure comprising;

a conductive layer;

an anodic metal layer comprising an anodic metal on the conductive layer of the resistive structure; and

a dielectric layer on the anodic metal layer, the dielectric layer comprising a metal oxide selected from the group consisting of aluminum oxide, niobium oxide, titanium oxide, tungstic oxide, zirconium oxide, and tantalum oxide,

wherein the conductive layer promotes adhesion of the anodic metal layer to the first contact and the second contact.

18. The passive device structure of claim 17 wherein the first electrode and the cross under are portions of a first metal layer and wherein the conductor, the first trace and the second trace are portions of a second metal layer.

19. The passive device structure of claim 18 wherein the first contact and the second contact are portions of the first metal layer.