Load driving device

• US 7,755,187 B2
• Filed: 05/31/2007
• Issued: 07/13/2010
• Est. Priority Date: 06/05/2006
• Status: Expired due to Fees

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Shiraki, Satoshi, Yamada, Akira, Ban, Hiroyuki
• Primary Examiner(s): Parekh; Nitin
• Application Number:
  US11/806,467
• Publication Number:
  US 20080007920A1
• Time in Patent Office: 1,139 Days
• Field of Search: 257/723, 257/666, 257/707, 257/713, 257/691, 257/690, 257/501, 257/E23.051
• US Class Current: 257/723
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73215 Layer and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H05K 7/1432 : specially adapted for power drive units or power converters
• CPC Class Codes: H05K 7/14329 : specially adapted for the configuration of power bus bars

Abstract

A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

Claims

1. A load driving device comprising:

an output power device for driving a load;

a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member;

a first electrode substrate; and

a heat radiation plate having heat radiation property, wherein

the output power device and the driving IC are mounted on the first electrode substrate,

the heat radiation plate is disposed on a side of the output power device and on a side of the driving IC, and

the side of the output power device and the side of the driving IC are opposite to the first electrode substrate.

2. The device according to claim 1, further comprising a rectification element connecting to the output power device, wherein the rectification element is mounted on the first electrode substrate.

3. The device according to claim 1, wherein the driving IC includes a detection element for detecting malfunction of the output power device and a protection element for protecting the output power device based on a detection result of the detection element.

4. The device according to claim 1, wherein the first electrode substrate has heat radiation property.

5. The device according to claim 1, wherein

the driving IC includes a support layer, an interlayer insulation film and a device layer, which provide a SOI structure,

the support layer, the interlayer insulation film and the device layer are stacked in this order,

the support layer couples with the first electrode substrate through a connection member therebetween,

the device layer is made of silicon,

the device layer includes a device forming region,

the support layer includes a portion corresponding to the device forming region, and

the portion of the support layer has a thermal expansion coefficient, which is substantially equal to a thermal expansion coefficient of the first electrode substrate.

6. The device according to claim 1, wherein the driving IC includes a wire, which faces the heat radiation plate, and

the wire has a thermal expansion coefficient, which is substantially equal to a thermal expansion coefficient of the heat radiation plate.

7. The device according to claim 1, wherein the driving IC is mounted on the first electrode substrate through the output power device therebetween.

8. The device according to claim 1, wherein the heat radiation plate includes an opening, which corresponds to the driving IC.

9. The device according to claim 1, wherein the heat radiation plate is electrically coupled with the output power device so that the heat radiation plate provides a second electrode substrate of the output power device.