Self-powered sensor
First Claim
Patent Images
1. A self-powered sensor comprising:
- a piezoelectric transducer;
a non-volatile memorya reference circuit, the reference circuit adapted to receive a voltage signal having rate of change from the piezoelectric transducer and operable to output the reference current into the memory;
an impact rate monitoring circuit including a switch and a triggering circuit;
the switch interposed between the reference circuit and the memory; and
the triggering circuit adapted to receive the voltage signal from the piezoelectric transducer and operable to control the switch based on the rate of change of the voltage signal.
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Accused Products
Abstract
A self-powered sensor is provided for strain-rate monitoring and other low power requirement applications. The self-powered sensor is comprised of: a piezoelectric transducer; a non-volatile memory comprised of at least one floating gate transistor; a current reference circuit adapted to receive a voltage signal from the piezoelectric transducer and operable to output a reference current into the non-volatile memory; an impact-monitoring circuit having a triggering circuit and a switch; the triggering circuit adapted to receive the voltage signal from the piezoelectric transducer and operable to control the switch based on the rate of change of the voltage signal.
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Citations
25 Claims
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1. A self-powered sensor comprising:
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a piezoelectric transducer; a non-volatile memory a reference circuit, the reference circuit adapted to receive a voltage signal having rate of change from the piezoelectric transducer and operable to output the reference current into the memory; an impact rate monitoring circuit including a switch and a triggering circuit; the switch interposed between the reference circuit and the memory; and the triggering circuit adapted to receive the voltage signal from the piezoelectric transducer and operable to control the switch based on the rate of change of the voltage signal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A self-powered sensor comprising:
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a piezoelectric transducer operable to produce a voltage signal corresponding to a change of rate of strain exerted on the piezoelectric transducer; a startup circuit operable to receive the voltage signal produced by the piezoelectric transducer and to supply a current to a reference circuit; the reference circuit operable to receive a current from the startup circuit, to generate a stable reference current and to mirror and supply the reference current to an impact monitoring circuit; the impact monitoring circuit comprising a plurality of impact monitoring channel circuits, each impact monitoring channel circuit sensitive to a predefined frequency corresponding to a rate of change in the voltage signal; each impact monitoring channel circuit operable to supply the reference current to a corresponding floating gate injector when the impact monitor channel circuit senses a frequency exceeding the predetermined frequency threshold; and each floating gate injector operable to inject charge into a floating gate transistor while the frequency of the voltage signal exceeds the predefined frequency threshold. - View Dependent Claims (17, 18)
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19. The self-powered sensor of 18 wherein the impact monitoring channel circuit further comprises a first current copier and a second current copier;
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the first current copier operable to receive the reference current and to supply the reference current to the common source amplifier; the second current copier operable to receive the reference current and to supply the reference current to the floating gate injector.
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20. The self-powered sensor of 18 further comprising a plurality of voltage nodes, each node corresponding to a impact rate channel circuit and each node having a charge corresponding to the charged stored in a capacitor in the floating gate capacitor.
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21. A self-powered device for gathering statistics on strain rate comprising:
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a transducer operable to generate a voltage signal in response to mechanical stress; a non-volatile memory comprised of at least one floating gate transistor; a reference circuit configured to receive the voltage signal having a rate of change from the transducer and operable to generate a current; an impact impact monitoring circuit configured to receive the voltage signal from the transducer and to receive the current from the reference circuit, the impact monitoring circuit operates to inject the current into the non-volatile memory when the rate of change of the voltage signal exceeds a predetermined threshold. - View Dependent Claims (22, 23, 24, 25)
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Specification