Reduced electric field arrangement for managing plasma confinement

• US 7,758,718 B1
• Filed: 12/29/2006
• Issued: 07/20/2010
• Est. Priority Date: 12/29/2006
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Dine, Sebastien
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US11/618,591
• Time in Patent Office: 1,299 Days
• Field of Search: None
• US Class Current: 156/345.45
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32559 Protection means, e.g. coatings
• CPC Class Codes: H01J 37/32587 Triode systems
• CPC Class Codes: H01J 37/32633 Baffles

Abstract

A method for processing a substrate in a plasma processing chamber having a chamber wall is provided. The method includes providing an electrode arrangement having a cylindrical electrode encapsulated within a dielectric liner, which is coupled with the chamber wall. The method also includes providing an inductive circuit arrangement, which is coupled between the cylindrical electrode and the chamber wall. The method further includes generating a plasma within the plasma processing chamber to process the substrate while the electrode arrangement is disposed within the plasma processing chamber.

Claims

1. A method for processing a substrate in a plasma processing chamber having a chamber wall, comprising:

providing an electrode arrangement having a cylindrical electrode encapsulated within a dielectric liner, said dielectric liner being coupled with said chamber wall;

providing an inductive circuit arrangement, said inductive circuit arrangement being coupled between said cylindrical electrode and said chamber wall; and

generating a plasma within said plasma processing chamber to process said substrate while said electrode arrangement is disposed within said plasma processing chamber.

2. The method of claim 1 wherein said chamber wall is coupled to ground.

3. The method of claim 2 wherein said inductive circuit arrangement includes a plurality of inductors coupled in parallel.

4. The method of claim 2 wherein said inductive circuit arrangement includes at least an inductor coupled in parallel to a resistor.

5. The method of claim 2 wherein said dielectric liner is bonded to said chamber wall.

6. The method of claim 2 wherein said dielectric liner is coupled to said chamber wall using at least one non-conductive fastener.

7. The method of claim 2 wherein said electrode is formed of a material that includes aluminum.

8. The method of claim 2 wherein said plasma processing chamber represents a capacitively coupled plasma processing chamber.

9. The method of claim 2 wherein said dielectric liner is formed of a dielectric material selected to be compatible with a process employed to process said substrate using said plasma.

10. The method of claim 2 wherein said inductive circuit arrangement includes at least one variable inductor.

11. A plasma processing system having a plasma processing chamber configured to process a substrate using plasma, said plasma processing chamber having chamber wall, comprising:

an electrode arrangement having a cylindrical electrode encapsulated within a dielectric liner, said dielectric liner being coupled with said chamber wall;

an inductive circuit arrangement, said inductive circuit arrangement being coupled between said cylindrical electrode and ground; and

a lower electrode coupled to an RF power source configured to generate said plasma and to process said substrate while said electrode arrangement is disposed in said plasma processing chamber.

12. The plasma processing system of claim 11 wherein said chamber wall is coupled to said ground.

13. The plasma processing system of claim 12 wherein said inductive circuit arrangement includes a plurality of inductors coupled in parallel.

14. The plasma processing system of claim 12 wherein said inductive circuit arrangement includes at least an inductor coupled in parallel to a resistor.

15. The plasma processing system of claim 12 wherein said dielectric liner is bonded to said chamber wall.

16. The plasma processing system of claim 12 wherein said dielectric liner is coupled to said chamber wall using at least one non-conductive fastener.

17. The plasma processing system of claim 12 wherein said electrode is formed of a material that includes aluminum.

18. The plasma processing system of claim 12 wherein said plasma processing chamber represents a capacitively coupled plasma processing chamber.

19. The plasma processing system of claim 12 wherein said dielectric liner is formed of a dielectric material selected to be compatible with a process employed to process said substrate using said plasma.

20. The plasma processing system of claim 12 wherein said inductive circuit arrangement includes at least one variable inductor.

21. A plasma processing system having a plasma processing chamber configured to process a substrate using plasma, said plasma processing chamber having chamber wall, comprising:

conductive Means disposed in a non-contacting manner proximal said chamber wall;

dielectric insulating means disposed between said conductive means and said chamber wall so as to prevent plasma from being generated in a region between said conductive means and said chamber wall during plasma processing; and

an inductive circuit arrangement, said inductive circuit arrangement being coupled between said conductive means and ground.

22. The plasma processing system of claim 21 wherein said inductive circuit arrangement includes a plurality of inductors coupled in parallel.

23. The plasma processing system of claim 21 wherein said inductive circuit arrangement includes at least an inductor coupled in parallel to a resistor.

24. The plasma processing system of claim 21 wherein said inductive circuit arrangement includes at least one variable inductor.

25. The plasma processing system of claim 21 wherein said plasma processing chamber represents a capacitively coupled plasma processing chamber.