Spin-on protective coatings for wet-etch processing of microelectronic substrates
First Claim
1. A method of forming a microelectronic structure, said method comprising the step of applying a first protective layer to a microelectronic substrate surface, said first protective layer including a polymer comprising recurring monomers having the respective formulas
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Abstract
New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
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Citations
32 Claims
- 1. A method of forming a microelectronic structure, said method comprising the step of applying a first protective layer to a microelectronic substrate surface, said first protective layer including a polymer comprising recurring monomers having the respective formulas
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18. A method of forming a microelectronic structure, said method comprising the steps of:
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applying a primer layer to a microelectronic substrate surface; and applying a first protective layer to said primer layer, said first protective layer including a polymer comprising recurring monomers having the respective formulas - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification