Controlling shape of a reticle with low friction film coating at backside

• US 7,759,024 B2
• Filed: 02/28/2007
• Issued: 07/20/2010
• Est. Priority Date: 02/28/2007
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Shu, Emily Y., Chen, George
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US11/712,192
• Publication Number:
  US 20080204694A1
• Time in Patent Office: 1,238 Days
• Field of Search: 430/5, 430/394, 355/75
• US Class Current: 430/5
• CPC Class Codes: G03B 27/62 Holders for the original G03B27/53 takes precedence ; for electrophotographic copiers G03G15/60

Abstract

In an embodiment of the invention, an apparatus includes a reticle having a frontside including a pattern to be imaged onto a semiconductor wafer, a thin film located over a backside of the reticle to form a global convex shape and to reduce friction when sliding on a chuck, and the chuck having a topside to which the backside of the reticle conforms.

Claims

1. A method comprising:

forming a thin film over a backside of a reticle;

deforming said backside into a global convex shape;

coupling voltage across said thin film; and

conforming said backside of said reticle to a topside of an electrostatic chuck by sliding the reticle across the electrostatic chuck via the thin film.

2. The method of claim 1, further comprising forming a lubricating fluid over a topside of the electrostatic chuck.

3. The method of claim 1, further comprising:

positioning said backside of said reticle over said topside of said electrostatic chuck;

contacting high points of said backside of said reticle to said topside of said electrostatic chuck;

coupling a voltage across said electrostatic chuck and said reticle; and

reducing a gap between said backside of said reticle and said topside of said electrostatic chuck.

4. The method of claim 3 further comprising performing an extreme ultraviolet lithography process to transfer a pattern from said frontside of said reticle to a semiconductor wafer.

5. The method of claim 3 further comprising decoupling said voltage across said thin film.

6. The method of claim 3, further comprising forming said thin film with a plurality of layers including a base layer and an overlying layer, wherein said base layer comprises a high adhesion material and said overlying layer comprises a low sliding friction material.

7. The method of claim 3, further comprising performing a rework operation on said thin film.

8. A method comprising:

coupling a thin film to a concave shaped backside of a reticle, the thin film including a low friction sliding material;

applying stress, via the thin film, to the backside of the reticle to deform the backside of the reticle into a convex shaped backside portion and an unflattened backside portion; and

coupling the reticle to an electrostatic chuck;

wherein coupling the reticle to the chuck includes flattening the unflattened backside portion by coupling voltage across the thin film and sliding the reticle across the chuck via the low friction sliding material.

9. The method of claim 8, further comprising forming a lubricating fluid over a topside of the chuck and flattening the unflattened backside portion by sliding the reticle across the lubricating fluid.

10. The method of claim 8, wherein flattening the unflattened backside portion includes contacting high points of the reticle to the chuck before contacting low points of the reticle to the chuck, the high points being located closer to the chuck than the low points.

11. The method of claim 8 including conforming the unflattened backside portion to the electrostatic chuck by completely flattening the unflattened backside portion.

12. The method of claim 8 including forming the thin film using a liquid phase process.

13. The method of claim 8, further comprising forming a lubricating fluid over the chuck and flattening the unflattened backside portion by sliding the reticle across the lubricating fluid, wherein the lubricating fluid has a thickness that varies by position over the chuck based on temperature.

14. The method of claim 8 including forming a lubricating fluid over a topside of the chuck and flattening the unflattened backside portion by sliding the reticle across the lubricating fluid, wherein the lubricating fluid has non-Newtonian rheological properties.

15. The method of claim 8, wherein flattening the unflattened backside portion includes contacting central points of the reticle to the chuck before contacting peripheral points of the reticle to the chuck.

16. The method of claim 8 including coupling the thin film to the reticle, wherein the low friction sliding material includes a coefficient of friction (μ

) generally between 0.01 and 0.35.

17. The method of claim 8 including determining the backside of the reticle does not include a global convex shape and coupling the thin film to the reticle based on the determination.

18. The method of claim 9 including determining the backside of the reticle does not include a global convex deformation and coupling the thin film and lubricating fluid to the reticle based on the determination.