Substrate provided with an alignment mark in a substantially transmissive process layer, mask for exposing said mark, device manufacturing method, and device manufactured thereby

• US 7,759,029 B2
• Filed: 11/06/2008
• Issued: 07/20/2010
• Est. Priority Date: 05/23/2001
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Haren, Richard Johannes Franciscus
• Primary Examiner(s): Young; Christopher G
• Application Number:
  US12/266,189
• Publication Number:
  US 20090075452A1
• Time in Patent Office: 621 Days
• Field of Search: 430/5, 430/22, 430/30, 257/797, 438/401
• US Class Current: 430/22
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 9/7076 Mark details, e.g. phase grating mark, temporary mark
• CPC Class Codes: G03F 9/7088 Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2223/54426 for alignment
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/975 Substrate or mask aligning feature

Abstract

A substrate provided with an alignment mark in a substantially transmissive process layer overlying the substrate, said mark comprising high reflectance areas for reflecting radiation of an alignment beam of radiation, and low reflectance areas for reflecting less radiation of the alignment beam, wherein the high reflectance areas comprise at least one substantially linear sub-grating. In one example, a substantially linear sub-grating comprises a plurality of spaced square regions.

Claims

1. A device manufacturing method, comprising:

providing a substrate comprising an alignment mark that is disposed in a transmissive layer, the alignment mark comprising a relatively high reflectance area and a low reflectance area that is at least partially covered by a layer of radiation sensitive material;

aligning the alignment mark to a reference, with an alignment beam of radiation;

providing a projection beam of radiation using a radiation system;

using a patterning structure to endow the projection beam with a patterned cross-section; and

projecting the patterned beam of radiation onto a target portion of the layer of radiation sensitive material,

wherein the relatively high reflectance area comprises a plurality of substantially linear sub-gratings, at least one of the substantially linear sub-gratings comprising a plurality of spaced square regions.

2. The method of claim 1, wherein the plurality of substantially linear sub-gratings comprise a plurality of parallel lines.

3. The method of claim 1, wherein the square regions are high reflectance areas.

4. The method of claim 1, wherein a first substantially linear sub-grating of the plurality of substantially linear sub-gratings is defined by a first sub-grating pitch, and a second substantially linear sub-grating of the plurality of substantially linear sub-gratings is defined by a second sub-grating pitch different from the first sub-grating pitch.

5. The method of claim 2, wherein the plurality of substantially linear sub-gratings comprise four sub-gratings mutually arranged such that lines contained within a first sub-grating run substantially perpendicular to lines contained in each sub-grating that is opposed along a common edge to the first sub-grating, and wherein the lines within the first sub-grating run substantially parallel to lines contained in a sub-grating diagonally opposed to the first sub-grating.

6. The method of claim 5, wherein the plurality of substantially linear sub-gratings are mutually arranged to define a substantially square shape.

7. The method of claim 2, wherein the mark is disposed within a layer that is substantially transmissive to an alignment beam used for the lithographic overlay measurements.

8. The method of claim 2, wherein the mark is disposed within a copper dual damascene layer.

9. The method of claim 1, further comprising, prior to the providing the substrate:

measuring positions of a plurality of diffraction orders in a pupil plane of the projection system of the patterned beam;

subsequently, measuring positions of the diffraction orders in the pupil plane of a preliminary alignment mark; and

modifying the preliminary alignment mark to obtain the alignment mark.

10. The method of claim 1, further comprising, prior to the providing the substrate:

simulating a preliminary alignment mark using simulation software to obtain a mark that has diffraction orders having positions in the pupil plane similar to those of the patterned projection beam.