Manufacturing method of semiconductor device

• US 7,759,177 B2
• Filed: 08/08/2006
• Issued: 07/20/2010
• Est. Priority Date: 08/12/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takahashi, Hidekazu, Sugiyama, Eiji
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US11/500,717
• Publication Number:
  US 20070037337A1
• Time in Patent Office: 1,442 Days
• Field of Search: 438/585, 438/610, 438/613, 438/661, 438/662, 438/151, 257/E21.415
• US Class Current: 438/151
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68386 Separation by peeling
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/0332 Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/03332 using a powder
• CPC Class Codes: H01L 2224/0355 Selective modification
• CPC Class Codes: H01L 2224/0391 Forming a passivation layer after forming the bonding area
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05116 Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05157 Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/0517 : Zirconium [Zr] as principal constituent
• CPC Class Codes: H01L 2224/05171 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05172 : Vanadium [V] as principal constituent
• CPC Class Codes: H01L 2224/05173 : Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/05178 : Iridium [Ir] as principal constituent
• CPC Class Codes: H01L 2224/05179 : Niobium [Nb] as principal constituent
• CPC Class Codes: H01L 2224/0518 : Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05181 : Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05187 : Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05188 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2224/05339 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05639 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05839 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05844 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05847 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 27/1214 : comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 : the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 : combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01054 : Xenon [Xe]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/13069 : Thin film transistor [TFT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance

Abstract

A method for manufacturing a semiconductor device of the present invention is provided including the steps of forming a first conductive layer over a substrate; forming a second conductive layer containing a conductive particle and resin over the first conductive layer; and increasing an area where the first conductive layer and the second conductive layer are in contact with each other by irradiating the second conductive layer with a laser beam. By including the step of laser beam irradiation, the portion where the first conductive layer and the second conductive layer are in contact with each other can be increased and defective electrical connection between the first conductive layer and the second conductive layer can be improved.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a peeling layer over a substrate;

forming a first insulating layer over the peeling layer;

forming a transistor over the first insulating layer;

forming a second insulating layer over the transistor;

forming a first conductive layer connected to a source or a drain of the transistor through an opening provided in the second insulating layer;

forming a second conductive layer containing a conductive particle and resin over the first conductive layer;

increasing an area where the first conductive layer and the second conductive layer are in contact with each other by irradiating the second conductive layer with a laser beam;

selectively forming a third insulating layer so as to expose part of the second conductive layer over the second insulating layer and the second conductive layer;

forming such an opening that the peeling layer is exposed by irradiating the second insulating layer and the third insulating layer with a laser beam; and

separating a stacked body including the transistor from the substrate by using the inside of the peeling layer or the interface between the peeling layer and the first insulating layer as a boundary.

2. A method for manufacturing a semiconductor device according to claim 1, wherein, as the first conductive layer, a layer containing titanium, tungsten, chromium, aluminum, tantalum, nickel, zirconium, hafnium, vanadium, iridium, niobium, lead, platinum, molybdenum, cobalt, or rhodium is formed.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the first conductive layer is formed by a sputtering method.

4. A method for manufacturing a semiconductor device according to claim 1, wherein the second conductive layer is formed by a screen printing method.

5. A method for manufacturing a semiconductor device according to claim 1, wherein the conductive particle is gold, silver, or copper.

6. A method for manufacturing a semiconductor device according to claim 1, wherein, as the peeling layer, a layer containing tungsten is formed.

7. A method for manufacturing a semiconductor device comprising the steps of:

forming a peeling layer over a first substrate;

forming a first insulating layer over the peeling layer;

forming a transistor over the first insulating layer;

forming a second insulating layer over the transistor;

forming a first conductive layer connected to a source or a drain of the transistor through an opening provided in the second insulating layer;

forming a second conductive layer containing a conductive particle and resin so as to be in contact with the first conductive layer;

increasing an area where the first conductive layer and the second conductive layer are in contact with each other by irradiating the second conductive layer with a laser beam;

selectively forming a third insulating layer so as to expose part of the second conductive layer over the second insulating layer and the second conductive layer;

forming such an opening that the peeling layer is exposed by irradiating the second insulating layer and the third insulating layer with a laser beam;

with the use of a second substrate provided over a surface of the third insulating layer, separating a stacked body including the transistor from the first substrate by using the inside of the peeling layer or the interface between the peeling layer and the first insulating layer as a boundary;

separating the second substrate from a surface of the second insulating layer along with providing a third substrate over a surface of the first insulating layer;

forming a third conductive layer connected to the second conductive layer through an opening provided in the third insulating layer; and

providing a fourth substrate over the third insulating layer so as to electrically connect to each other the third conductive layer and a fourth conductive layer over the fourth substrate.

8. A method for manufacturing a semiconductor device according to claim 7, wherein, as the first conductive layer, a layer containing titanium, tungsten, chromium, aluminum, tantalum, nickel, zirconium, hafnium, vanadium, iridium, niobium, lead, platinum, molybdenum, cobalt, or rhodium is formed.

9. A method for manufacturing a semiconductor device according to claim 7, wherein the first conductive layer is formed by a sputtering method.

10. A method for manufacturing a semiconductor device according to claim 7, wherein the second conductive layer is formed by a screen printing method.

11. A method for manufacturing a semiconductor device according to claim 7, wherein the conductive particle is gold, silver, or copper.

12. A method for manufacturing a semiconductor device according to claim 7, wherein, as the peeling layer, a layer containing tungsten is formed.