Method of fabricating semiconductor device

• US 7,759,211 B2
• Filed: 03/20/2008
• Issued: 07/20/2010
• Est. Priority Date: 04/25/2003
• Status: Expired due to Term

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Harada, Shin, Fujikawa, Kazuhiro
• Primary Examiner(s): Le; Thao P.
• Application Number:
  US12/077,825
• Publication Number:
  US 20080254603A1
• Time in Patent Office: 852 Days
• Field of Search: 438/369, 438/551, 257/E21.057, 257/E21.058, 257/E21.346
• US Class Current: 438/369
• CPC Class Codes: H01L 21/046 using ion implantation
• CPC Class Codes: H01L 21/0465 using masks
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence

Abstract

There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substrate, at a selected region to sufficient depth. To achieve this the method includes the steps of: providing the semiconductor substrate at a surface thereof with a mask layer including a polyimide resin film, or a SiO₂ film and a thin metal film; and introducing dopant ions.

Claims

1. A method of fabricating a semiconductor device by employing ion implantation to provide a semiconductor substrate at a surface thereof with a region having dopant introduced therein, comprising the steps of:

providing said semiconductor substrate at a surface thereof with a mask layer including a first SiO₂ film, a second SiO₂ film and a thin metal film disposed between said first and second SiO₂ films; and

implanting dopant ions.

2. The method of claim 1, wherein said semiconductor substrate is heated to a range of 300°

C. to 500°

C. and said dopant ions are implanted.

3. The method of claim 1, wherein said semiconductor substrate is heated to a range of 500°

C. to 800°

C. and said dopant ions are implanted.

4. The method of claim 1, wherein said first SiO₂ film and said thin metal film each have an average thickness of 500 nm to 1.5 μ

m.

5. The method of claim 1, wherein said mask layer includes said first SiO₂ film as a bottommost layer.

6. The method of claim 1, wherein said mask layer includes said first Si0₂ film as a topmost layer.

7. The method of claim 1, wherein said first Si0₂ film is formed by SOG.

8. The method of claim 1, wherein said semiconductor substrate is a SiC semiconductor substrate.

9. The method of claim 1, wherein said mask layer is deposited on said semiconductor substrate at a region to be undoped with dopant ions.

10. The method of claim 1, wherein said dopant ions are implanted into a region unmasked by said mask layer.

11. The method of claim 1, wherein said implanting of said dopant ions is carried out to an implantation dosage of 1×

10¹⁵ cm<sup>−

2</sup> or less.

12. A method of preparing a doped semiconductor substrate, comprising the steps:

a) providing a semiconductor substrate;

b) providing a mask layer to include a first SiO₂ film, a second SiO₂ film, and a first thin metal film disposed between said first and second SiO₂ films on a first region of a surface of said substrate;

c) heating said substrate to at least 300°

C.; and

d) while said substrate is at a temperature of at least 300°

C., implanting, by ion implantation, dopant ions into said substrate through a second region of said surface to form in said substrate a doped region that is doped with said dopant ions.

13. The method according to claim 12, wherein said step b) of providing said mask layer comprises applying said mask layer on said first region and said second region of said surface, applying a resist layer on said mask layer, exposing said resist layer through a patterning mask to photolithographically pattern said resist layer, and then etching said mask layer through said resist layer to remove a portion of said mask layer on said second region of said surface of said substrate.

14. The method according to claim 12, wherein said temperature is in a range from 300°

C. to 500°

C.

15. The method according to claim 12, wherein said temperature is in a range from 500°

C. to 800°

C.

16. The method according to claim 12, wherein said semiconductor substrate comprises SiC.

17. A method of preparing a doped semiconductor substrate, comprising the steps:

a) providing a semiconductor substrate;

b) providing a mask layer on a first region of a surface of said substrate, wherein said mask layer is formed to include a SiO₂ film, a thin metal film and a polyimide resin film arranged with at least one of said thin metal film or said SiO₂ film between said polyimide resin film and said semiconductor substrate;

c) heating said substrate to at least 300°

C.; and

d) while said substrate is at a temperature of at least 300°

C., implanting, by ion implantation, dopant ions into said substrate through a second region of said surface to form in said substrate a doped region that is doped with said dopant ions.

18. The method according to claim 17, wherein said thin metal film is arranged between said polyimide resin film and said semiconductor substrate.

19. The method according to claim 18, wherein said SiO₂ film is arranged between said polyimide resin film and said semiconductor substrate.

20. The method according to claim 17, wherein said SiO₂ film is arranged between said polyimide resin film and said semiconductor substrate.

21. A method of fabricating a semiconductor device by employing ion implantation to provide a semiconductor substrate at a surface thereof with a region having dopant introduced therein, comprising the steps of:

providing said semiconductor substrate at a surface thereof with a mask layer including a SiO₂ film and a thin metal film;

further providing a polyimide resin film on said thin metal film or on said SiO₂ film such that said thin metal film or said SiO₂ film is between said polyimide resin film and said semiconductor substrate; and

implanting dopant ions.

22. The method according to claim 21, wherein said polyimide resin film is provided on said thin metal film such that said thin metal film is between said polyimide resin film and said semiconductor substrate.

23. The method according to claim 21, wherein said polyimide resin film is provided on said SiO₂ film such that said SiO₂ film is between said polyimide resin film and said semiconductor substrate.

24. The method according to claim 21, wherein said mask layer includes said thin metal film as a bottommost layer.

25. The method according to claim 21, wherein said mask layer includes said thin metal film as a topmost layer.