System for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts in overlap regions, and a mask for facilitating such artifact reduction/elimination

• US 7,759,230 B2
• Filed: 03/07/2006
• Issued: 07/20/2010
• Est. Priority Date: 09/16/2003
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Im, James S.
• Primary Examiner(s): FAHMY, WAEL M
• Assistant Examiner(s): Rao; Steven H
• Application Number:
  US11/370,000
• Publication Number:
  US 20070020942A1
• Time in Patent Office: 1,596 Days
• Field of Search: 438/486
• US Class Current: 438/486
• CPC Class Codes: B23K 26/066 by using masks
• CPC Class Codes: B23K 26/0676 into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
• CPC Class Codes: B23K 26/073 Shaping the laser spot
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0268 Shape of mask
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam

Abstract

An arrangement, process and mask for implementing single-scan continuous motion sequential lateral solidification of a thin film provided on a sample such that artifacts formed at the edges of the beamlets irradiating the thin film are significantly reduced. According to this invention, the edge areas of the previously irradiated and resolidified areas which likely have artifacts provided therein are overlapped by the subsequent beamlets. In this manner, the edge areas of the previously resolidified irradiated areas and artifacts therein are completely melted throughout their thickness. At least the subsequent beamlets are shaped such that the grains of the previously irradiated and resolidified areas which border the edge areas melted by the subsequent beamlets grow into these resolidifying edges areas so as to substantially reduce or eliminate the artifacts.

Claims

1. An arrangement for processing at least one portion of a thin film sample on a substrate, comprising:

a processing system controlling an irradiation beam generator to emit successive irradiation beam pulses at a predetermined repetition rate; and

a mask receiving thereon each of the irradiation beam pulses, the mask including a beam pattern which, when the beam pulses irradiate therethrough, defines one or more first beamlets and one or more second beamlets, each of the first and second beamlets having two opposite edge sections and a center section,

wherein the first beamlets irradiate one or more first areas of the film sample so that the first areas are melted throughout their thickness, wherein at least one first section of the first areas irradiated by at least one particular beamlet of the first beamlets is allowed to re-solidify and crystallize thereby having grains grown therein, the at least one first section including at least one first resolidified area,

wherein, after the one or more first areas are irradiated, the second beamlets irradiate one or more second areas of the film sample so that the second areas are melted throughout their thickness, wherein at least one second section of the second areas irradiated by at least one subsequent beamlet is allowed to re-solidify and crystallize thereby having grains grown therein, the at least one second section including at least one second resolidified area irradiated by at least one of the edge sections of the subsequent beamlet which overlaps the at least one first resolidified area,

wherein artifacts are substantially reduced and eliminated upon the resolidification of the at least one second section of the second area,

wherein the edge sections of each of the first and second beamlets are a front section and a rear section, wherein the at least one first resolidified area is irradiated by the rear section of the particular beamlet, and wherein the at least one second resolidified area is irradiated by the front section of the subsequent beamlet, and

wherein the rear section of at least one particular beamlet has a width for a substantial length thereof which is smaller than a width of the center section of the at least one particular beamlet, and wherein the front section of at least one subsequent beamlet of the second beamlets has a width for a substantial length thereof which is smaller than a width of the center section of the subsequent beamlet.

2. The arrangement according to claim 1, wherein the rear section of the particular beamlet and the front section of the subsequent beamlet have substantially straight edges which slope toward one another and away from the center section of the respective one of the particular and subsequent beamlets.

3. The arrangement according to claim 1, wherein the rear section of the particular beamlet and the front section of the subsequent beamlet have a triangular shape.

4. The arrangement according to claim 3, wherein each of the front and rear sections has three apexes, and wherein one of the apexes of each of the front and rear sections points away from the central section of a respective one of the particular and subsequent beamlets.

5. The arrangement according to claim 1, wherein the rear section of the particular beamlet and the front section of the subsequent beamlet have a trapezoid shape.

6. The arrangement according to claim 5, wherein the trapezoid-shaped rear section of the particular beamlet has a first conceptual side extending for a width of the central section of the particular beamlet, and a second side provided at an edge of the rear section away from the central section, the first side being greater than the second side.

7. The arrangement according to claim 5, wherein the trapezoid-shaped front section of the subsequent beamlet has a third conceptual side extending for a width of the central section of the subsequent beamlet, and a fourth side provided at an edge of the front section away from the central section, the third side being greater than the fourth side.

8. The arrangement according to claim 1, wherein, upon the resolidification of the at least one second section of the second area, at least most of the grains from the at least one resolidified first section of the first area that are adjacent to the at least one second section grow into the at least one solidifying second section in a direction which is approximately perpendicular to a direction of extension of the at least one solidifying second section.

9. A masking arrangement utilized for processing at least one portion of a thin film sample on a substrate, comprising:

at least one portion configured to receive thereon irradiation beam pulses, the at least one portion including a front section, a rear section and a center section, wherein when the beam pulses irradiate through the front, rear and center section modified beam pulses are produced which define one or more first beamlets and one or more second beamlets,

wherein the rear section of at least one portion has a first width which is smaller than a width of the center section of the at least one portion, and

wherein the front section of at least one portion has a second width which is smaller than the width of the center section wherein the width of the center section, the first width and the second width are arranged substantially perpendicular to the irradiation beam pulses.