Pattern invariant focusing of a charged particle beam

• US 7,759,642 B2
• Filed: 04/30/2008
• Issued: 07/20/2010
• Est. Priority Date: 04/30/2008
• Status: Active Grant

• Current Assignee: Applied Materials Israel Limited (Applied Materials Incorporated)
• Original Assignee: Applied Materials Israel Limited (Applied Materials Incorporated)
• Inventors: Nir, Zvi
• Primary Examiner(s): Berman; Jack I
• Application Number:
  US12/112,913
• Publication Number:
  US 20090272900A1
• Time in Patent Office: 811 Days
• Field of Search: 250/307, 250/310, 250/309
• US Class Current: 250/310
• CPC Class Codes: H01J 2237/216 Automatic focusing methods
• CPC Class Codes: H01J 2237/221 Image processing
• CPC Class Codes: H01J 37/21 Means for adjusting the focus
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence

Abstract

A method for focusing a scanning microscope, including scanning a primary charged particle beam across first sites of a reference die of a wafer, detecting a secondary beam emitted from the sites, and computing first focus scores for the sites based on the secondary beam. The method includes scanning the primary beam across second sites of a given die of the wafer while modulating a focal depth of the primary beam, the reference die and the given die having congruent layouts, the second sites corresponding vectorially in location with the first sites, and detecting the secondary beam emitted from the second sites in response to the primary beam. The method also includes computing second focus scores for the second sites based on the detected secondary beam emitted therefrom, and determining an exact focus of the primary beam for the second sites using the first and the second focus scores.

Claims

1. A method for focusing a scanning microscope, comprising;

scanning a primary charged particle beam across a plurality of first sites of a reference die of a wafer;

detecting a secondary beam of charged particles emitted from the plurality of first sites in response to the primary charged particle beam;

computing first focus scores for the plurality of first sites based on the detected secondary beam;

scanning the primary charged particle beam across a plurality of second sites of a given die of the wafer while modulating a focal depth of the primary charged particle beam, the reference die and the given die having congruent layouts, and wherein the second sites respectively correspond vectorially in location with the first sites of the reference die;

detecting the secondary beam of charged particles emitted from the plurality of second sites in response to the primary charged particle beam;

computing second focus scores for the second sites based on the detected secondary beam emitted therefrom, and

determining an exact focus of the primary charged particle beam for the second sites in response to the first and the second focus scores.

2. The method according to claim 1, wherein modulating the focal depth comprises modulating a focal parameter of a focusing element of the microscope, wherein computing the second focus scores comprises determining a phase of the second focus scores, and wherein determining the exact focus comprises comparing the phase of the second focus scores with a phase of the focal parameter.

3. The method according to claim 2, wherein comparing the phase of the second focus scores with the phase of the focal parameter comprises determining a difference between the phase of the second focus scores and the phase of the focal parameter, and wherein the difference varies monotonically about a reference phase corresponding with the exact focus.

4. The method according to claim 1, wherein computing the second focus scores comprises determining an amplitude variation of the second focus scores, and wherein determining the exact focus comprises determining the exact focus in response to the amplitude variation.

5. The method according to claim 4, wherein the amplitude variation is a minimum at the exact focus, and wherein determining the exact focus comprises determining a difference of a measured amplitude variation from the minimum.

6. The method according to claim 1, wherein modulating the focal depth comprises modulating a focal parameter of a focusing element of the microscope, and wherein determining the exact focus comprises setting the focal parameter in response the first and second focus scores.

7. The method according to claim 1, wherein the plurality of first sites and the plurality of second sites comprise sites having differing patterns, and wherein determining the exact focus comprises determining the exact focus for the sites having differing patterns.

8. The method according to claim 1, wherein determining the exact focus comprises comparing respective first focus scores with respective second focus scores so as to form respective normalized focus scores.

9. The method according to claim 1, wherein scanning the primary charged particle beam across the plurality of first sites comprises maintaining a focal parameter of the primary charged beam at a constant value.

10. Apparatus for focusing a scanning microscope, comprising:

an irradiation module which is configured to scan a primary charged particle beam across a plurality of first sites of a reference die of a wafer, and to scan the primary charged particle beam across a plurality of second sites of a given die of the wafer while modulating a focal depth of the primary charged particle beam, the reference die and the given die having congruent layouts, and wherein the second sites respectively correspond vectorially in location with the first sites of the reference die;

an imaging detector which is configured to detect a secondary beam of charged particles emitted from the first sites and the second sites in response to the primary charged particle beam; and

a processor which is configured to compute first focus scores for the plurality of first sites and second focus scores for the plurality of second sites based on the detected secondary beam and to determine an exact focus of the primary charged particle beam for the second sites in response to the first and the second focus scores.

11. The apparatus according to claim 10, wherein modulating the focal depth comprises modulating a focal parameter of a focusing element of the microscope, wherein computing the second focus scores comprises determining a phase of the second focus scores, and wherein determining the exact focus comprises comparing the phase of the second focus scores with a phase of the focal parameter.

12. The apparatus according to claim 11, wherein comparing the phase of the second focus scores with the phase of the focal parameter comprises determining a difference between the phase of the second focus scores and the phase of the focal parameter, and wherein the difference varies monotonically about a reference phase corresponding with the exact focus.

13. The apparatus according to claim 10, wherein computing the second focus scores comprises determining an amplitude variation of the second focus scores, and wherein determining the exact focus comprises determining the exact focus in response to the amplitude variation.

14. The apparatus according to claim 13, wherein the amplitude variation is a minimum at the exact focus, and wherein determining the exact focus comprises determining a difference of a measured amplitude variation from the minimum.

15. The apparatus according to claim 10, wherein modulating the focal depth comprises modulating a focal parameter of a focusing element of the microscope, and wherein determining the exact focus comprises setting the focal parameter in response to the first and second focus scores.

16. The apparatus according to claim 10, wherein the plurality of first sites and the plurality of second sites comprise sites having differing patterns, and wherein determining the exact focus comprises determining the exact focus for the sites having differing patterns.

17. The apparatus according to claim 10, wherein determining the exact focus comprises comparing respective first focus scores with respective second focus scores so as to form respective normalized focus scores.

18. The apparatus according to claim 10, wherein scanning the primary charged particle beam across the plurality of first sites comprises maintaining a focal parameter of the primary charged beam at a constant value.