3D R/W cell with reduced reverse leakage
First Claim
Patent Images
1. A nonvolatile memory device, comprising:
- a semiconductor diode steering element;
a semiconductor read/write switching element; and
a C49 phase crystallization template layer which directly physically contacts the steering element, wherein the steering element is crystallized in direct contact with the C49 phase crystallization template layer.
4 Assignments
0 Petitions
Accused Products
Abstract
A nonvolatile memory device includes a semiconductor diode steering element, and a semiconductor read/write switching element.
-
Citations
15 Claims
-
1. A nonvolatile memory device, comprising:
-
a semiconductor diode steering element; a semiconductor read/write switching element; and a C49 phase crystallization template layer which directly physically contacts the steering element, wherein the steering element is crystallized in direct contact with the C49 phase crystallization template layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A nonvolatile memory device, comprising:
-
a crystallized polycrystalline silicon, germanium or silicon germanium semiconductor diode steering element; a titanium silicide, titanium germanide or titanium silicide-germanide crystallization template layer having a C49 phase in physical contact with the diode steering element; a semiconductor resistor read/write switching element; at least one metal, metal silicide or titanium nitride conductive layer located between the steering element and the read/write switching element; a first electrode electrically contacting the steering element; and a second electrode electrically contacting the read/write switching element; wherein the read/write switching element, the at least one conductive layer and the steering element are arranged in series in a pillar between the first electrode and the second electrode. - View Dependent Claims (15)
-
Specification