Multifaced microdevice system array

• US 7,759,685 B2
• Filed: 04/15/2009
• Issued: 07/20/2010
• Est. Priority Date: 02/21/2006
• Status: Active Grant

• Current Assignee: Rather Creative Innovations Group, Inc.
• Original Assignee: Gregory W. Auner, John D.G. Rather
• Inventors: Rather, John D. G., Auner, Gregory W.
• Primary Examiner(s): Garber; Charles D
• Assistant Examiner(s): Roman; Angel
• Application Number:
  US12/424,222
• Publication Number:
  US 20090283777A1
• Time in Patent Office: 461 Days
• Field of Search: 257/685, 257/723, 257/80, 257/416, 257/E33.076, 257/E29.166
• US Class Current: 257/80
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A multisurfaced microdevice system array is produced from a wafer formed of semiconductor substrate material. Sensing, controlling and actuating microdevices are fabricated at specific location on both sides of the wafer, and the wafer is diced. Each die thus created is then formed into a multisurfaced, multifaced structure having outer and inner faces. The multifaced structure and the microdevices form a standardized microdevice system, and cooperatively combined microdevice systems form a microdevice system array. Communication of energy and data to and between microdevices on each and other microdevice systems of the microdevice system array is provided by energy transferring devices including electric conductors for transferring electric energy, ultrasound emitters and receivers for transferring acoustic energy, and electromagnetic energy emitters and receivers for transferring electromagnetic energy.

Claims

1. A multisurfaced microdevice system array, comprising:

a plurality of semiconductor substrates, each having a first and a second surface;

a plurality of sensing, controlling and actuating microdevices disposed at locations on at least one of the surfaces of each substrate, at least one of the substrates extending from another substrate to form a multisurfaced structure having a multifaced configuration including at least two outer faces and at least two inner faces, the plurality of substrates and the plurality of microdevices forming a microdevice system; and

a plurality of the microdevice systems disposed to form a readily extendable microdevice system array, each microdevice system of the array having the capability of communicating operating energy and data to at least one other microdevice system, the array providing economical and efficient redundancies of microdevices to perform a plurality of functions, some of which require specific microdevice orientations provided by angular dispositions, including acute, right, obtuse, straight and reflex angles, of the surfaces of the multifaced microdevice systems.

2. The multisurfaced microdevice system array as defined by claim 1, wherein:

a plurality of the microdevice systems in a specific microdevice system array comprise a standardized complement of microdevices to provide the economical and efficient redundancies of microdevices to facilitate their use in a variety of applications.

3. The multisurfaced microdevice system array as defined by claim 1, wherein each microdevice system comprises at least one microprocessor.

4. The multisurfaced microdevice system array as defined by claim 1, wherein the microdevices are fabricated at locations on both outer and inner faces, have a root mean square linear displacement accuracy within 75 nanometers and have a root mean square angular displacement accuracy within 75 nanoradians to facilitate the transfer of energy through empty space and through the substrate to operate, and to communicate data to, other microdevices.

5. The multisurfaced microdevice system array as defined by claim 1, further comprising a plurality of energy transferring apparatuses for transferring energy to operate, and to communicate data to and between, the microdevices on each and other microdevice systems of the microdevice system array.

6. The multisurfaced microdevice system array as defined by claim 5, wherein the energy transferring apparatuses comprise electric conductors connected between electric microdevice contacts for transferring electric energy.

7. A multisurfaced microdevice system array, comprising:

a plurality of semiconductor substrates, each having a first and a second surface;

a plurality of sensing, controlling and actuating microdevices disposed at locations on at least one of the surfaces of each substrate, at least one of the substrates extending from another substrate to form a multisurfaced structure having a multifaced configuration including at least two outer faces and at least two inner faces, the plurality of substrates and the plurality of microdevices forming a microdevice system;

a plurality of the microdevice systems disposed to form a readily extendable microdevice system array, each microdevice system of the array having the capability of communicating operating energy and data to at least one other microdevice system, the array providing economical and efficient redundancies of microdevices to perform a plurality of functions, some of which require specific microdevice orientations provided by angular dispositions, including acute, right, obtuse, straight and reflex angles, of the surfaces of the multifaced microdevice systems;

wherein the microdevices are fabricated at locations on both outer and inner faces, have a root mean square linear displacement accuracy within 75 nanometers and have a root mean square angular displacement accuracy within 75 nanoradians to facilitate the transfer of energy through empty space and through the substrate to operate, and to communicate data to, other microdevices; and

wherein the microdevices are fabricated at locations on both the outer and inner faces, and the registration of the microdevices located at the inner faces and of the microdevices located oppositely at respective outer faces is accurate to within 0.10 millimeter to facilitate the transfer of energy through empty space and through the substrate to operate, and to communicate data to, other microdevices.

8. A multisurfaced microdevice system array, comprising:

a plurality of semiconductor substrates, each having a first and a second surface;

a plurality of sensing, controlling and actuating microdevices disposed at locations on at least one of the surfaces of each substrate, at least one of the substrates extending from another substrate to form a multisurfaced structure having a multifaced configuration including at least two outer faces and at least two inner faces, the plurality of substrates and the plurality of microdevices forming a microdevice system;

a plurality of the microdevice systems disposed to form a readily extendable microdevice system array, each microdevice system of the array having the capability of communicating operating energy and data to at least one other microdevice system, the array providing economical and efficient redundancies of microdevices to perform a plurality of functions, some of which require specific microdevice orientations provided by angular dispositions, including acute, right, obtuse, straight and reflex angles, of the surfaces of the multifaced microdevice systems; and

a plurality of energy transferring apparatuses for transferring energy to operate, and to communicate data to and between, the microdevices on each and other microdevice systems of the microdevice system array, wherein the energy transferring apparatuses comprise acoustic emitters and receivers for transferring acoustic energy and electromagnetic energy emitters and receivers for transferring electromagnetic energy.

9. The multisurfaced microdevice system array as defined by claim 8, wherein the energy transferring apparatuses comprise electromagnetic energy emitters and receivers for transferring electromagnetic energy having a wavelength within the infrared spectrum, and wherein the substrates are formed primarily of silicon, thereby providing a semiconductive material with which to fabricate the microdevices and also providing a transparent path 6 for the infrared electromagnetic energy to pass between microdevices oppositely located at outer and inner faces of substrates.

10. The multisurfaced microdevice system array as defined by claim 8, wherein the energy transferring apparatuses comprise electromagnetic energy emitters and receivers for transferring electromagnetic energy having a wavelength within the radio frequency spectrum.