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Anti-reflection structures for CMOS image sensors

  • US 7,759,755 B2
  • Filed: 05/14/2008
  • Issued: 07/20/2010
  • Est. Priority Date: 05/14/2008
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a photodiode located on a first surface of a semiconductor layer;

    a metal interconnect layer located on said first surface of said semiconductor layer; and

    an insulator layer located on a second surface of said semiconductor layer, wherein said second surface is located on an opposite side of said first surface, and wherein said insulator layer includes an array of protuberances at an interface with an ambient gas or vacuum, wherein a pitch of said protuberances is less than 270 nm.

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