Semiconductor device

• US 7,759,788 B2
• Filed: 08/29/2008
• Issued: 07/20/2010
• Est. Priority Date: 08/30/2007
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsurume, Takuya, Ohtani, Hisashi, Aoki, Tomoyuki, Adachi, Hiroki
• Primary Examiner(s): Blum; David S
• Application Number:
  US12/230,484
• Publication Number:
  US 20090057875A1
• Time in Patent Office: 690 Days
• Field of Search: 257/702, 257/E23.007
• US Class Current: 257/702
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A highly reliable semiconductor device which is not damaged by local pressing force from the outside and in which unevenness of a portion where an antenna and an element overlap with each other is reduced. The semiconductor device includes a chip and an antenna. The chip includes a semiconductor element layer including a thin film transistor; a conductive resin electrically connected to the semiconductor element layer; and a sealing layer. The sealing layer in which a fiber body is impregnated with an organic resin covers the semiconductor element layer and the conductive resin, and has a thickness of 10 to 100 μm. The antenna has a depressed portion and is electrically connected to the semiconductor element layer through the conductive resin. The chip is embedded inside the depressed portion. The thickness of the chip is equal to the depth of the depressed portion.

Claims

1. A semiconductor device comprising:

a chip comprising;

a semiconductor element layer comprising a thin film transistor;

a conductive resin over the semiconductor element layer; and

a sealing layer covering the semiconductor element layer and the conductive resin, comprising a fiber body impregnated with an organic resin; and

an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin,

wherein the chip is embedded inside the depressed portion,

wherein the sealing layer has a thickness of 10 to 100 μ

m, and

wherein a thickness of the chip is equal to or smaller than a depth of the depressed portion.

2. A semiconductor device according to claim 1,

wherein the fiber body is a woven fabric.

3. A semiconductor device according to claim 2,

wherein the woven fabric comprises warp yarns and weft yarns, and

wherein at least one yarn of the warp yarns and the weft yarns is a bundled single yarn of an organic compound or an inorganic compound.

4. A semiconductor device according to claim 1,

wherein the fiber body is a nonwoven fabric.

5. A semiconductor device according to claim 1,

wherein the fiber body includes at least one of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

6. A semiconductor device according to claim 1,

wherein the organic resin includes at least one of a thermosetting resin, a thermoplastic resin, and a UV curable resin.

7. A semiconductor device according to claim 6,

wherein the thermosetting resin is one selected from the group consisting of an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, and a cyanate resin.

8. A semiconductor device according to claim 6,

wherein the thermoplastic resin is one selected from the group consisting of a polyphenylene oxide resin, a polyetherimide resin, and a fluorine resin.

9. A semiconductor device according to claim 1,

wherein the antenna includes at least one of silver, gold, copper, nickel, platinum, palladium, tantalum, molybdenum, titanium, and aluminum.

10. A semiconductor device according to claim 6,

wherein the antenna includes at least one of silver, gold, copper, nickel, platinum, palladium, tantalum, molybdenum, titanium, and aluminum.

11. A semiconductor device comprising:

a chip comprising;

a semiconductor element layer comprising a thin film transistor;

a conductive resin over the semiconductor element layer; and

a sealing layer covering the semiconductor element layer and the conductive resin, comprising a fiber body impregnated with an organic resin; and

an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin; and

a substrate provided to cover the chip and the antenna,

wherein the chip is embedded inside the depressed portion, and is located between the antenna and substrate,

wherein the sealing layer has a thickness of 10 to 100 μ

m,

wherein a thickness of the chip is ⅔

to 4/3 times a thickness of the substrate.

12. A semiconductor device according to claim 11,

wherein the fiber body is a woven fabric.

13. A semiconductor device according to claim 12,

wherein the woven fabric comprises warp yarns and weft yarns, and

wherein at least one yarn of the warp yarns and the weft yarns is a bundled single yarn of an organic compound or an inorganic compound.

14. A semiconductor device according to claim 11,

wherein the fiber body is a nonwoven fabric.

15. A semiconductor device according to claim 11,

wherein the fiber body includes at least one of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

16. A semiconductor device according to claim 11,

wherein the organic resin includes at least one of a thermosetting resin, a thermoplastic resin, and a UV curable resin.

17. A semiconductor device according to claim 16,

wherein the thermosetting resin is one selected from the group consisting of an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, and a cyanate resin.

18. A semiconductor device according to claim 16,

wherein the thermoplastic resin is one selected from the group consisting of a polyphenylene oxide resin, a polyetherimide resin, and a fluorine resin.

19. A semiconductor device according to claim 11,

wherein the antenna includes at least one of silver, gold, copper, nickel, platinum, palladium, tantalum, molybdenum, titanium, and aluminum.

20. A semiconductor device according to claim 16,

wherein the antenna includes at least one of silver, gold, copper, nickel, platinum, palladium, tantalum, molybdenum, titanium, and aluminum.

21. A semiconductor device comprising:

a chip comprising;

a semiconductor element layer comprising a thin film transistor;

a conductive resin over the semiconductor element layer; and

an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin,

wherein the chip is embedded inside the depressed portion,

wherein a thickness of the chip is equal to or smaller than a depth of the depressed portion.

22. A semiconductor device comprising:

a chip comprising;

a semiconductor element layer comprising a thin film transistor;

a conductive resin over the semiconductor element layer; and

an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin; and

a substrate provided to cover the chip and the antenna,

wherein the chip is embedded inside the depressed portion, and is located between the antenna and substrate,

wherein a thickness of the chip is ⅔

to 4/3 times a thickness of the substrate.