Multi-channel semiconductor integrated circuit
First Claim
1. A semiconductor integrated circuit comprising:
- a high-side transistor connected to a first reference potential;
a low-side transistor connected to a second reference potential;
a level shift circuit connected between the first reference potential and the second reference potential for driving the high-side transistor; and
a pre-driver circuit connected to a third reference potential for driving the low-side transistor,wherein a connection point of the high-side transistor and the low-side transistor serves as an output terminal,the level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit, and any one of drains of which is connected to a gate of the high-side transistor, andthe semiconductor integrated circuit further comprises a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is directly connected to the output terminal.
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Accused Products
Abstract
A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.
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Citations
18 Claims
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1. A semiconductor integrated circuit comprising:
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a high-side transistor connected to a first reference potential; a low-side transistor connected to a second reference potential; a level shift circuit connected between the first reference potential and the second reference potential for driving the high-side transistor; and a pre-driver circuit connected to a third reference potential for driving the low-side transistor, wherein a connection point of the high-side transistor and the low-side transistor serves as an output terminal, the level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit, and any one of drains of which is connected to a gate of the high-side transistor, and the semiconductor integrated circuit further comprises a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is directly connected to the output terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13, 14, 15, 16)
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10. A semiconductor integrated circuit comprising:
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a high-side transistor connected to a first reference potential; a low-side transistor connected to a second reference potential; a level shift circuit connected between the first reference potential and the second reference potential for driving the high-side transistor; and a pre-driver circuit connected to a third reference potential for driving the low-side transistor, wherein a connection point of the high-side transistor and the low-side transistor serves as an output terminal, the level shift circuit has first and second IGBTs whose gates are driven by the pre-driver circuit, and any one of drains of which is connected to a gate of the high-side transistor, and the semiconductor integrated circuit further comprises a diode whose anode is connected to the collector of the first or second IGBT to which the gate of the high-side transistor is not connected, and whose cathode is directly connected to the output terminal. - View Dependent Claims (17, 18)
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Specification