Film bulk acoustic resonator, filter, and fabrication method thereof

• US 7,760,049 B2
• Filed: 05/30/2007
• Issued: 07/20/2010
• Est. Priority Date: 05/30/2006
• Status: Expired due to Fees

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Sakai, Hiroyuki, Yahata, Kazuhiro, Tsurumi, Naohiro, Uno, Takashi
• Primary Examiner(s): Barnie; Rexford N
• Assistant Examiner(s): Tabler; Matthew C
• Application Number:
  US11/806,123
• Publication Number:
  US 20070279155A1
• Time in Patent Office: 1,147 Days
• Field of Search: 333186-195
• US Class Current: 333/193
• CPC Class Codes: H03H 2003/025 the resonators or networks comprising an acoustic mirror
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H03H 9/175 Acoustic mirrors
• CPC Class Codes: H03H 9/589 Acoustic mirrors

Abstract

A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.

Claims

1. A film bulk acoustic resonator comprising:

a substrate;

an acoustic reflector portion formed on the substrate;

an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion; and

a smoothing layer formed between the acoustic reflector portion and the acoustic resonator portion, wherein;

the acoustic reflector portion includes low acoustic impedance layers and high acoustic impedance layers which are alternately stacked on the substrate;

the high acoustic impedance layers have higher acoustic impedance than the low acoustic impedance layers;

the smoothing layer is an insulating layer, is in contact with the lower electrode and an uppermost part of the acoustic reflector portion, said smoothing layer is formed by spin coating, and has lower acoustic impedance than the low acoustic impedance layers; and

the uppermost part of the acoustic reflector portion is one of the high acoustic impedance layer.

2. A film bulk acoustic resonator comprising:

a substrate;

an acoustic reflector portion formed on the substrate;

an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion; and

a smoothing layer formed between the acoustic reflector portion and the acoustic resonator portion, wherein;

the acoustic reflector portion includes low acoustic impedance layers and high acoustic impedance layers which are alternately stacked on the substrate;

the high acoustic impedance layers have higher acoustic impedance than the low acoustic impedance layers;

the smoothing layer is in contact with the lower electrode and an uppermost part of the acoustic reflector portion, is formed of a spin-on glass material, a fluorine-based resin material, a silicone-based resin material, or an epoxy-based resin material, and has lower acoustic impedance than the low acoustic impedance layers; and

the uppermost part of the acoustic reflector portion is one of the high acoustic impedance layers.

3. A film bulk acoustic resonator comprising:

a substrate;

an acoustic reflector portion formed on the substrate;

an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion; and

a smoothing layer formed between the acoustic reflector portion and the acoustic resonator portion, wherein;

the acoustic reflector portion includes low acoustic impedance layers and high acoustic impedance layers which are alternately stacked on the substrate;

the high acoustic impedance layers have higher acoustic impedance than the low acoustic impedance layers;

the smoothing layer is an insulating layer, is in contact with the lower electrode and an uppermost part of the acoustic reflector portion, said smoothing layer is formed by spin coating, and has lower acoustic impedance than the low acoustic impedance layers; and

the uppermost part of the acoustic reflector portion is one of the low acoustic impedance layer.

4. A film bulk acoustic resonator comprising:

a substrate;

an acoustic reflector portion formed on the substrate;

an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion; and

a smoothing layer formed between the acoustic reflector portion and the acoustic resonator portion, wherein;

the acoustic reflector portion includes low acoustic impedance layers and high acoustic impedance layers which are alternately stacked on the substrate;

the high acoustic impedance layers have higher acoustic impedance than the low acoustic impedance layers;

the smoothing layer is in contact with the lower electrode and an uppermost part of the acoustic reflector portion, is formed of a spin-on glass material, a fluorine-based resin material, a silicone-based resin material, or an epoxy-based resin material, and has lower acoustic impedance than the low acoustic impedance layers; and

the uppermost part of the acoustic reflector portion is one of the low acoustic impedance layers.

5. A film bulk acoustic resonator comprising:

a substrate;

an acoustic reflector portion formed on the substrate;

an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion; and

a smoothing layer formed between the acoustic reflector portion and the acoustic resonator portion, wherein;

the acoustic reflector portion includes low acoustic impedance layers and high acoustic impedance layers which are alternately stacked on the substrate;

the high acoustic impedance layers have higher acoustic impedance than the low acoustic impedance layers;

the smoothing layer is an insulating layer, is in contact with the lower electrode and an uppermost part of the acoustic reflector portion, said smoothing layer is formed by spin coating; and

an upper surface of the smoothing layer is smoother than the uppermost part of the acoustic reflector portion.