Exposure apparatus and exposing method and method of manufacturing a printed wiring board

• US 7,760,328 B2
• Filed: 03/08/2006
• Issued: 07/20/2010
• Est. Priority Date: 03/22/2005
• Status: Active Grant

• Current Assignee: Adtec Engineering Company Limited (Ushio Incorporated)
• Original Assignee: Hitachi VIA Mechanics Limited (Hitachi, Ltd.)
• Inventors: Oyama, Hiroshi, Yamaguchi, Yoshihide
• Primary Examiner(s): Glick; Edward J
• Assistant Examiner(s): Asfaw; Mesfin T
• Application Number:
  US11/370,044
• Publication Number:
  US 20060215143A1
• Time in Patent Office: 1,595 Days
• Field of Search: 355/69, 355/20, 355/53, 349/40, 349/42, 349/48
• US Class Current: 355/69
• CPC Class Codes: G03F 7/203 comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
• CPC Class Codes: G03F 7/7005 by multiple sources, e.g. light-emitting diodes [LED] or light source arrays addressable array sources specially adapted to produce patterns without a mask G03F7/70391
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70383 Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams maskless lithography using a programmable mask G03F7/70291
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475
• CPC Class Codes: H05K 3/0082 characterised by the exposure method of radiation-sensitive masks

Abstract

The mask-less exposure apparatus includes: a stage which moves with the substrate having a photosensitive resin layer with sensitivity to ultraviolet radiation formed thereon; a first light source for emitting light containing a wavelength component in the wavelength range of 300 to 410 nm; a first light irradiation optical system for modulating a radiant flux emitted from the first light source based on data of a desired exposure pattern to image a pattern on the photosensitive resin layer; a second light source for emitting light containing a wavelength component in the wavelength range of 450 to 2500 nm; and a second light irradiation optical system for guiding a radiant flux emitted from the second light source to a second light irradiation area that is set so as to include at least a first light irradiation area.

Claims

1. An exposing method for directly exposing an exposure pattern on a photosensitive resin layer having sensitivity to an ultraviolet radiation formed on a substrate, comprising:

modulating a radiant flux emitted from a first light source for emitting light consisting of a wavelength component in the wavelength range of 400 to 410 nm using a digital micro mirror device based on data of a desired exposure pattern;

irradiating a resulting modulated radiant flux on said photosensitive resin layer so as to enable exposure of said photosensitive resin layer and to create said desired exposure pattern; and

irradiating a second radiant flux emitted from a second light source for emitting light containing a wavelength component in the wavelength range of 450 to 2,500 nm on said photosensitive resin layer substantially simultaneously with said irradiating of said resulting modulated radiant flux on said photosensitive resin layer so as to enable exposure of said photosensitive resin layer and augment a photosensitive reaction in said photosensitive resin layer.

2. The exposing method according to claim 1, wherein said photosensitive resin layer is made of any one of a plating resist, an etching resist, and a solder resist.

3. The exposing method according to claim 1, wherein said photosensitive resin layer is made of any one of a modified acrylate system monomer and a modified methacrylate system monomer.

4. The exposing method according to claim 1, wherein said second radiant flux does not incorporate said desired exposure pattern.

5. The exposing method according to claim 1, wherein the wavelength range of 400 to 410 nm enables extended durability of the digital micro mirror device.